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Description
● The chip is manufactured with the silicon epitaxy process, with characteristics such as
high power gain, broadband, low noise, low leakage current and small junction capacity; in
addition, it has relatively large dynamic ranges and ideal current linear features;
● It is mainly applied to ultrahigh-frequency microwave, VHF, UHF and CATV highfrequency broad-band low-noise amplifiers, such as satellite television tuners, CATV amplifiers,
analog digital cordless telephones, high-frequency amplifiers in radio frequency modules and
optical modules;
● Collector-emitter breakdown voltage: BVCEO=15V, maximum collector current:
IC=70mA, collector power dissipation: PC=300mW, characteristic frequency: fT=9GHz;
amplifiers in radio frequency modules and optical modules;
● The SOT143B or SOT143R surface of the pins (the wide collector pin and the dualemitter pin) is pasted with plastic package;
● ON4973/X and BFG520/X have the same performance, package and silk screen
printing, with only difference in models on tags.
Features:
● Type: Epitaxial Silicon Transistor
Applications:
The BFG520/XR transistor finds application in various high-frequency electronic circuits, including:
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