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Description:
The CZT5551 is a NPN bipolar (BJT) transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
Features:
● Type: NPN bipolar transistor
Applications
● High voltage amplifier applications.
Quick reference data
Symbol | Parameter | Conditions | Max | Unit |
VCEO | collector-emitter voltage | open base | 160 | V |
IC | collector current | 0.6 | A | |
VCEsat |
collector-emitter saturation voltage |
IC = 50mA; IB = 5mA | 0.2 | V |
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