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MMDT3904 NPN Bipolar Transistor SOT-363 MMDT3904 NPN Bipolar Transistor SOT-363 MMDT3904 NPN Bipolar Transistor SOT-363
MMDT3904 NPN Bipolar Transistor SOT-363

Type:NPN

Vceo:40V

Ic:0.2A

Pd:0.2W

fT:300MHz


Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description:

The MMDT3904 is a versatile NPN bipolar junction transistor designed for precision switching and amplification tasks in electronic circuits. Featuring a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 0.2A, it offers efficient performance in a compact form factor. With a power dissipation rating (Pd) of 0.2W, it is suitable for applications requiring moderate power handling capabilities.

Features:
Epitaxial planar die construction.
Ideal for low power amplification and switching.
Ultra-small surface mount package Also available in lead free version.

Application:
General switching and amplification

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