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MMDT3906 PNP Bipolar Transistor SOT-363 MMDT3906 PNP Bipolar Transistor SOT-363 MMDT3906 PNP Bipolar Transistor SOT-363
MMDT3906 PNP Bipolar Transistor SOT-363

Type:Double PNP

Vceo:40V

Ic:200mA

Pd:200mW

Icbo-

VCE(sat)@Ic,Ib:400mV@50mA,5mA

hFE@Ic,Vce:100@10mA,1V

fT:250MHz

Working Temperature:+150℃@(Tj)

Product Details


Our advantages:

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description:

The MMDT3906 is a high-performance double PNP bipolar junction transistor, engineered for efficient switching and amplification in various electronic applications. With a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 200mA, it offers robust performance in a compact package. The transistor is designed to handle up to 200mW of power dissipation, ensuring reliability under varying operational conditions.

Features:
Epitaxial planar die construction.
Ideal for low power amplification and switching.
Ultra-small surface mount package.
Also available in lead free version.

Applications:
General switching and amplification

MMDT3906_0.jpg

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