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SiC Devices
Silicon carbide SiC is a compound semiconductor material composed of silicon Si and carbon C, usually in 4H-SiC crystal type. Its insulation breakdown field strength is 10 times that of Si, energy gap is 3 times that of Si, thermal conductivity is 3 times that of Si, and saturation drift speed is 2 times that of Si. It is a very superior power electronic device material than Si.
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