With high-frequency Schottky barrier diode structure, SiC SBD achieves more than 600V high voltage, while maximum withstand voltage of silicon SBD is only 200V or so, and its on-state voltage drop is much lower than that of the silicon fast recovery diode. its shutdown recovery time is smaller, hence shutdown loss is lower, resulting in lower electromagnetic interference EMI. The use of SiC SBD to replace the mainstream product silicon fast recovery diode FRD, can significantly reduce the total loss, improve the efficiency of the power supply, and through the high-frequency operation to achieve the miniaturization of passive components such as inductors and capacitors, and electromagnetic interference EMI is lower. Silicon carbide SBD can be widely used in air conditioners, power supplies, inverters in photovoltaic power generation systems, motor-drag systems for electric vehicles and fast chargers.