Bi-directional ESD Protection Diode in DFN1006 Package

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

The SLESD5451X is a high-performance ESD (Electrostatic Discharge) protection device engineered to deliver exceptional safeguarding for sensitive electronics in a compact DFN1006 package. Designed for low-voltage applications, it offers a working voltage (VRWM) of 5V and a minimum breakdown voltage (VBR) of 8.4V, ensuring reliable protection against transient voltage spikes. With an ultra-low reverse leakage current (IR) of just 0.1μA, it minimizes power loss and enhances overall system efficiency. The device features a clamping voltage (VC) of 10V, providing robust protection during voltage surges. Its junction capacitance (CJ) of 18pF strikes a balance between effective protection and maintaining signal integrity, making it suitable for a variety of applications. The DFN1006 package offers a compact and space-efficient solution for modern electronic designs.

Features

● Capacitance: 15pF(typ.)

● Reverse Working Voltage: 5V

● IEC 61000-4-2 (ESD Air): ±25KV

● IEC 61000-4-2 (ESD Contact): ±25V

   IEC 61000-4-5 (Lightning 8/20µs): 5A

Applications

● Smart Phone and Tablet PC

● TV and Set Top Box

● Wearable Devices

● PDA