Bi-directional ESD Protection Diode in DFN1006 Package

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

The SLESD8D12CT5G is a high-performance ESD (Electrostatic Discharge) protection device tailored for advanced electronic applications requiring robust transient voltage protection. Encased in a compact DFN1006 package, this device provides reliable safeguarding for circuits operating at moderate to high voltages. With a working voltage (VRWM) of 12V and a minimum breakdown voltage (VBR) of 14.5V, the SLESD8D12CT5G ensures effective clamping of transient voltages. It features a low reverse leakage current of 0.01µA and a clamping voltage (VC) of 19V, offering superior protection against voltage surges. The device also has a junction capacitance (CJ) of 8pF, making it suitable for high-speed and high-frequency applications while maintaining signal integrity.

Features

● Capacitance: 8pF(typ.)

● Reverse Working Voltage: 12V

● IEC 61000-4-2 (ESD Air): ±30KV

   IEC 61000-4-2 (ESD Contact): ±30V

   IEC 61000-4-5 (Lightning 8/20µs): 8A

Applications

● Smart Phone and Tablet PC

● TV and Set Top Box

● Wearable Devices

● PDA