Bi-directional ESD Protection Diode in DFN1006 Package

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

The SLESD8D3.3CAT5G is a cutting-edge ESD (Electrostatic Discharge) protection device designed to offer robust safeguarding in high-speed and sensitive electronic applications. Housed in a compact DFN1006 package, this device is optimized for applications requiring efficient protection against electrostatic discharge and transient voltage spikes. With a working voltage (VRWM) of 3.3V and a minimum breakdown voltage (VBR) of 5.5V, the SLESD8D3.3CAT5G provides reliable protection for low-voltage circuits. It features an exceptionally low reverse leakage current of 0.01µA and a clamping voltage (VC) of 8.5V, ensuring effective suppression of voltage surges. The device also boasts a junction capacitance (CJ) of 10pF, making it ideal for maintaining signal integrity in high-frequency and high-speed applications.

Features

● Capacitance: 10pF(typ.)

● Reverse Working Voltage: 3.3V

● IEC 61000-4-2 (ESD Air): ±30KV

   IEC 61000-4-2 (ESD Contact): ±30V

   IEC 61000-4-5 (Lightning 8/20µs): 8.5A

Applications

● Cellular phones

● Portable devices

● Digital cameras

● Power supplies