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SLESD9B3.3S ESD Protection Devices DFN1006 SLESD9B3.3S ESD Protection Devices DFN1006 SLESD9B3.3S ESD Protection Devices DFN1006
SLESD9B3.3S ESD Protection Devices DFN1006

VRWM(V):3.3V
VBR min(V):5V
IR(A):0.01μA
VC(V):8.5V
CJ(pF):10pF
Package:DFN1006

Product Details

Bi-directional ESD Protection Diode in DFN1006 Package

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

The SLESD9B3.3S is a precision ESD (Electrostatic Discharge) protection device designed to offer superior protection for low-voltage electronic circuits. With a working voltage (VRWM) of 3.3V and a minimum breakdown voltage (VBR) of 6V, this device effectively shields sensitive components from voltage transients while maintaining optimal performance. The device features an ultra-low reverse leakage current of 0.01μA, minimizing power loss and ensuring high efficiency. Its clamping voltage (VC) of 8.5V provides robust protection against high-energy surges, and the junction capacitance (CJ) of 10pF makes it suitable for applications where moderate capacitance is acceptable.


Features

● Capacitance: 10pF(typ.)

● Reverse Working Voltage: 3.3V

● IEC 61000-4-2 (ESD Air): ±30KV

● IEC 61000-4-2 (ESD Contact): ±30V

   IEC 61000-4-5 (Lightning 8/20µs): 8.5A


Applications

● Cellular phones

● Portable devices

● Digital cameras

● Power supplies

SLESD9B3.3S DFN1006_0.jpg

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