SiC Schottky diodes, also known as silicon carbide Schottky diodes, have the following characteristics: 

Slkor SiC Schottky diodes

1) Electrical Performance:

High Breakdown Voltage: The breakdown voltage can reach up to 1200V and beyond, which is a significant improvement over traditional silicon diodes. This makes SiC Schottky diodes suitable for high-voltage applications, such as high-voltage direct current transmission and electric locomotive traction.

Low Forward Voltage Drop: The forward voltage is lower, meaning the power loss during forward conduction is smaller, improving circuit efficiency and reducing energy loss. This feature is especially useful in power conversion circuits where high efficiency is critical, such as switch-mode power supplies and inverters.

Zero Reverse Recovery Charge: There is virtually no reverse recovery current, and the reverse recovery loss is negligible. This characteristic allows SiC diodes to switch quickly from the conducting to the non-conducting state in high-frequency switching circuits, significantly improving switching speed and frequency, reducing energy loss and electromagnetic interference, and enhancing system performance and reliability. This feature is widely used in power modules for high-frequency communication base stations.

2) Thermal Performance:

High Operating Temperature: SiC diodes have excellent high-temperature stability and can operate at higher temperatures, typically up to 175°C or higher. In contrast, traditional silicon devices typically have a maximum operating temperature of around 150°C. This makes SiC diodes more reliable in high-temperature environments, reducing the burden and cost of cooling systems.

High Thermal Conductivity: Silicon carbide has a thermal conductivity about 3.3 times higher than silicon, approximately 49 W/cm·K. This excellent thermal conductivity allows the heat generated by the diode die to dissipate more rapidly, further improving its stability and reliability under high power and high-frequency conditions. It also helps reduce the size of the heat dissipation system, lowering the overall system cost.

3) Other Advantages:

High Radiation Resistance: In special applications, such as aerospace and nuclear industries, there are higher requirements for radiation resistance of electronic devices. SiC Schottky diodes' high radiation resistance allows them to operate reliably in harsh radiation environments, ensuring system reliability and safety.

Positive Temperature Coefficient: The forward voltage has a positive temperature coefficient, meaning the forward voltage increases slightly with rising temperature. This property is beneficial for parallel diode operation, as it ensures current balancing and prevents device damage due to uneven current distribution, thus improving system reliability and stability.

Miniaturization and Light Weight: SiC Schottky diodes offer higher power density and smaller sizes, enabling circuit miniaturization and light weighting for applications with strict space and weight limitations, such as electric vehicles and portable electronic devices. This is crucial for reducing product size and weight, improving portability, and enhancing product competitiveness.

Conclusion

SiC Schottky diodes are a transformative technology in power electronics, offering a wide range of benefits that include higher efficiency, better thermal performance, faster switching speeds, and improved reliability. Their use of silicon carbide as the semiconductor material allows them to handle high voltages, currents, and temperatures, making them suitable for a variety of high-performance applications. Whether used in electric vehicles, industrial motor drives, renewable energy systems, or power converters, SiC Schottky diodes are at the forefront of next-generation power electronics, driving innovation and efficiency in modern electronic systems.