SLKOR Micro's SiC diodes and regular diodes differ in several aspects:

Material and Structure

Regular Diodes: Typically made of silicon, with a PN  junction structure.

SiC Diodes: Made from silicon carbide, which provides unique properties due to its atomic structure and chemical bonds.

Electrical Performance

Reverse Recovery Time: SiC diodes have very fast reverse recovery times, reducing switching losses and electromagnetic interference, while regular diodes have slower recovery times, leading to higher losses.

Forward Voltage Drop: SiC diodes have a higher forward voltage drop but perform better in high voltage and high current applications.

Thermal Performance

Operating Temperature: SiC diodes can operate at higher temperatures (up to 175°C or higher), compared to regular diodes, which typically have a maximum operating temperature of around 150°C.

Thermal Conductivity: SiC has a much higher thermal conductivity, allowing SiC diodes to operate more efficiently in high-power and high-frequency conditions.

Applications

Regular Diodes: Used in low-frequency, low-power circuits, such as rectifiers, signal clippers, and detectors.

SiC Diodes: Suited for high-power, high-frequency, and high-temperature applications in fields such as new energy vehicles, power electronics, railway transportation, aerospace, and defense.