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Alternative equivalent for Infineon IRS2003S | Slkor SL2003 Gate Driver lCs

Slkor offers alternative replacement - SL2003 - for Infineon IRS2003S 20V Gate Driver lCs
V
DD(V): 20V
IO(A): 130mA
IDDq(A): 220μA
TA(℃): -40℃~125℃
Package: SOP-8





  

  


Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.

Slkor alternative equivalents to Infineon.

Infineon Slkor Replacements
Part Number Part Number Product Category Package
IRF640NPBF IRF640 MOSFET TO-220
IRFR5305TRPBF IRFR5305 MOSFET TO-252
TLE4275 SL4275 LDO TO-252
TLE4284 SL4284 LDO TO-252
TLF4949 SL4949 LDO SOP-8
TLE42754G SL4275-G LDO TO-263-5
TLE4264 SL4264-2 LDO SOT-223
TLE42744 SL42744D LDO TO-252-3
TLE42764 SL42764 LDO TO-252-5
BCR401 SL401 Gate Driver IC SOT-23
BTS3405G SL3405S Smart Power Switches SOP-8
TLE4264 SL4264-2 Zener Diode SOT-223
TLE8366 SL8366 DC-DC Regulator ESOP-8
IR21814/IRS21814 SL21814 Gate Driver IC SOP-14
IR2110S SL2110 Gate Driver IC SOP-16W
IRS2003S SL2003 Gate Driver IC SOP-8
IRS2004 SL2004 Gate Driver IC SOP-8
IR2103S SL2103 Gate Driver IC SOP-8


Description

The SL2003 is a high voltage, high speed power MOSFET and IGBT drivers with dependent highand low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200 V.


Features

● Floating channel designed for bootstrap operation

● Fully operational to +200 V

● Tolerant to negative transient voltage, dV/dt immune

● Gate drive supply range from 10 V to 20 V

● Undervoltage lockout

● 3.3 V, 5 V, and 15 V logic compatible

● Cross-conduction prevention logic

● Matched propagation delay for both channels

● Internal set deadtime

● High-side output in phase with HIN input

● Low-side output out of phase with input

● RoHS compliant

● SOP-8 package


Application
● Switching mode power supplies

● DC-to-DC converters

● Motor Control, solar power

● Gate drive for emerging wide band-gap power devices such as GaN


SL2003_00.pngSL9650M25SE SOT-23-5_00.png



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