Description：

lThe SL18N20 is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

Features

lVDS= 200V ID=18A

lRDS(ON)< 150mΩ@ VGS=10V （Type：120mΩ）

Application

lUninterruptible Power Supply(UPS)

lPower Factor Correction (PFC)