● Description:
Our N-Channel MOSFET is engineered to provide robust performance in high-voltage environments. With a maximum drain-source voltage of 650V, it is well-suited for high-voltage switching applications. The device features a low on-resistance of 1.1Ω (at V_gs = 10V and I_d = 3.5A), ensuring minimal power loss and efficient operation. Additionally, it has a total power dissipation capability of 30W, allowing it to handle significant power without overheating.

● Features:

● Fast Switching

● Low ON Resistance

● Low Gate Charge

● 100% Single Pulse avalanche energy Test

● Application:

● Power Supply Circuits: Efficient switching in power converters and regulators.

● Motor Drives: Reliable control of DC motors in industrial and consumer electronics.

● Switching Regulators: High-efficiency performance in step-up and step-down converters.

● Inverter Systems: Suitable for photovoltaic and uninterruptible power supply (UPS) systems.

● Lighting Control: Effective for switching and dimming applications in LED lighting systems.