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SL8N65F Metal Oxide-Silicon Field Effect Transistors SL8N65F Metal Oxide-Silicon Field Effect Transistors SL8N65F Metal Oxide-Silicon Field Effect Transistors
SL8N65F Metal Oxide-Silicon Field Effect Transistors

type: N-Channel

Vdss: 650V

Id: 8A

RDS(on)@VGS, ID: 1.1mΩ@10V, 3.5A

Vgs(th)@Id: 2V@250μA


Product Details

Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


General Description

The SL8N65F is a high-voltage N-Channel Enhancement MOSFET designed for demanding power applications. Housed in a robust TO-220F package, this MOSFET delivers exceptional performance with its high voltage rating, low on-resistance, and substantial current handling capabilities. It is well-suited for use in power supplies, switching regulators, and other high-power electronic circuits.


Features

● Fast Switching

● Low ON Resistance

● Low Gate Charge

● 100% Single Pulse avalanche energy Test


Applications

● Power switch circuit of adaptor and charger.


SL8N65F TO-220F_0.jpg


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