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Alternative Equivalent for Infineon IRFR5305TRPBF | Slkor IRFR5305 P-channel Power MOSFET Alternative Equivalent for Infineon IRFR5305TRPBF | Slkor IRFR5305 P-channel Power MOSFET Alternative Equivalent for Infineon IRFR5305TRPBF | Slkor IRFR5305 P-channel Power MOSFET
Alternative Equivalent for Infineon IRFR5305TRPBF | Slkor IRFR5305 P-channel Power MOSFET

Slkor offers alternative replacement - IRFR5305 - for Infineon IRFR5305TRPBF -60 V, -30 A P-channel power MOSFET 
Type: P-channel

Vdss: -60V

Id: -30A

RDS(on)@Vgs,Id: 26mΩ@-10V,-15A

Vgs(th)@Id: -1.8V@-250μA
Pd: 50W

Product Details

Our advantages:

China's manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. Slkor semiconductor electronic components can fully replace those of major international brands in 99% of applications without the need for testing verification. 

Slkor alternative equivalents for Infineon:

Infineon Slkor Replacements
Part Number Part Number Product Category Package
IRF640NPBF IRF640 MOSFET TO-220
IRFR5305TRPBF IRFR5305 MOSFET TO-252
TLE4275 SL4275 LDO TO-252
TLE4284 SL4284 LDO TO-252
TLF4949 SL4949 LDO SOP-8
TLE42754G SL4275-G LDO TO-263-5
TLE4264 SL4264-2 LDO SOT-223
TLE42744 SL42744D LDO TO-252-3
TLE42764 SL42764 LDO TO-252-5
BCR401 SL401 Gate Driver IC SOT-23
BTS3405G SL3405S Smart Power Switches SOP-8
TLE4264 SL4264-2 Zener Diode SOT-223
TLE8366 SL8366 DC-DC Regulator ESOP-8
IR21814/IRS21814 SL21814 Gate Driver IC SOP-14
IR2110S SL2110 Gate Driver IC SOP-16W
IRS2003S SL2003 Gate Driver IC SOP-8
IRS2004 SL2004 Gate Driver IC SOP-8
IR2103S SL2103 Gate Driver IC SOP-8



Description
:

This p-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. it can be used in a wide variety of applications.

Features :

lVs=-60V,l=-30A,RDS(ON)<35m Ω @VGS=-10V

lLow gate charge.

lGreen device available.

lAdvanced high cell denity trench technology for ultra RDS(ON).

lExcellent package for good heat dissipation.


IRFR5305 TO-252_00.jpg

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