Description

The SL30N06D uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge. ltcan be used in a wide variety of applications.

Features

lVos =60V. Id =30A. Ros(on) <35mΩ @ Vgs=10V

lHigh density cell design for ultra low RDS(ON)

lFully characterized avalanche voltage and current

lGood stability and uniformity with high Eas

lExcellent package for good heat dissipation

lSpecial process technology for high ESD capability

Application

lPower switching application

lHard switched and high frequency circuits

lUninterruptible power supply