Description

This P-Channel MOSFET uses advanced trench technology and design to provide excellent Rpsjon, with low gate charge. It can be used in a wide variety of applications.

Features

• V_DS=-60V, I_D=-8.5A, R_DS(ON)<30m Ω @V_GS=-10V

• Low gate charge.

• Green device available.

• Advanced high cell denity trench technology for uitra low R_DS(ON)
  

• Excellent package for good heat dissipation.