General Features  
● V_DS =80V,I_D =100A  R_DS(ON) < 12mΩ @ V_GS=10V  
● Special process technology for high ESD capability  
● High density cell design for ultra low R_dson  
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS  
● Excellent package for good heat dissipation

Application  
● Power switching application  
● Hard switched and high frequency circuits
● Uninterruptible power supply