N-Channel Power MOSFET

General Features

● V_DS =-60V. I_D =11A

R_DS(ON)<175 mΩ V_GS=-10V

R_DS(ON)<210 mΩ@V_GS=-4.5V

● Improved dv/dt capability

● High density cell design for ultra low R_dson

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Applications

● Power switching application

● Hard switched and high frequency circuits

● LED Lighting