N-Channel Power MOSFET

General Features

● V_DS =60V. I_D =17A

R_DS(ON)<75 mΩ V_GS=10V

R_DS(ON)<90 mΩ@V_GS=4.5V

● Improved dv/dt capability

● High density cell design for ultra low Rdson

● Good stability and uniformity with high EAs

● Excellent package for good heat dissipation

Applications

● Power switching application

● Hard switched and high frequency circuits

● Motor drive