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N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS 100V
● ID 2.0A
● RDS(ON)( at VGS=10V) ＜310 mohm
● RDS(ON)( at VGS=4.5V) ＜350 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● MSL LEVEL1
Applications
● DC-DC Converters
● Power management functions
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