N-Channel Power MOSFET

General Features

● V_DS =60V.I_D =60A

  R_DS(ON)<11.5mΩ V_GS=10V (Typ:9.1mQ)

● High density cell design for ultra low R_dson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply