Events

Updated: 2023-10-31
Views: 7505

Shenzhen Kinghelm Electronics Co., Ltd. is a national high-tech enterprise and a member of the "GNSS & LBS Association of China", "China Information Industry T……

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MediaTek releases financial report for the third quarter of 2023

Updated: 2023-10-28
Views: 9544

MediaTek releases financial report for the third quarter of 2023

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Hong Kong Electronics Fair Helps SLKOR Internationalize

Updated: 2023-10-20
Views: 7746

On October 13th, as a Chinese high-tech enterprise serving the global integration of high-end semiconductor design and development, manufacturing, sales and service, Shenzhen SlkorMicro Semicon Co., Ltd. (hereinafter referred to as SLKOR) was invited to participate in the 2023 Hong Kong Electronics Fair (Autumn Editio……

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Tea party to celebrate the Mid-Autumn Festival and National Day

Updated: 2023-10-17
Views: 8409

On the afternoon of September 28, 2023, following the festive holidays of the Mid-Autumn Festival and National Day, Kinghelm (www.kinghelm.net)/Slkor (www.slkoric.com) organized a tea party to celebrate National Day and welcome the Mid-Autumn Festival. All employees of the company actively participated and enjoyed the ……

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Slkor & Kinghelm Staff Essay Contest for Mid-Autumn Festival and National Day

Updated: 2023-10-17
Views: 7178

As the cool autumn breeze drifts in and the scent of osmanthus flowers fills the air, the double holiday of Mid-Autumn Festival and National Day in 2023 has added even more festive atmosphere. Kinghelm (www.kinghelm.net) and Slkor (www.slkoric.com) have organized an internal employee essay competition for Mid-Autumn Fe……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (IX)

Updated: 2023-10-14
Views: 8789

In addition to the laboratory-scale EUV light used by NIST to analyze semiconductor components, Dr. Steve Grantham also presented a wealth of resources at NIST's Synchrotron Ultraviolet Radiation Facility (SURF III) during the working group meeting. When charged particles move along a curved path, they emit synchrot……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (VIII)

Updated: 2023-10-14
Views: 8029

In addition to the laboratory-scale EUV light used by NIST to analyze semiconductor components, Dr. Steve Grantham also presented a wealth of resources at NIST's Synchrotron Ultraviolet Radiation Facility (SURF III) during the working group meeting. When charged particles move along a curved path, they emit synchrot……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (VII)

Updated: 2023-10-14
Views: 8245

At the working group meeting, researchers from NIST discussed three main themes related to using EUV as an analytical tool to assist the semiconductor manufacturing industry. The three methods for utilizing EUV light as an analytical technique are: (1) high harmonic generation (HHG), (2) synchrotron radiation, and (3) ……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (VI)

Updated: 2023-10-14
Views: 8803

The main process change that affects yield is edge-placement error (EPE). This occurs when unexpected nanoscale irregularities are displayed in the edges and sidewalls of photoresist patterns. These irregularities are random and colloquially referred to as line-edge roughness (LER). As device sizes continue to shrink, ……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (V)

Updated: 2023-10-14
Views: 7891

Absolute radiometric measurement is important not only for the development of lithography processes and instrument acceptance tests but also for the quantitative understanding of EUV light generation processes. Predictive modeling of this process has lagged behind the development of EUV tools themselves. Improving mode……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (IV)

Updated: 2023-10-14
Views: 10438

NIST is currently developing an instrument for measuring SoS at higher pressures and temperatures. The SoS instrument is part of Dr. Elizabeth Rasmussen's National Research Council (NRC) postdoctoral fellowship in metal additive manufacturing. A U.S. patent on the design and operation of the instrument was submitted in……

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Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (III)

Updated: 2023-10-14
Views: 8891

2.1 Droplet Generator: Extreme Thermophysical Properties and Modeling The droplet generator is an important component of the EUVL scanner assembly (Figure 3)……

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