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6N139 Optocoupler DIP-8 6N139 Optocoupler DIP-8 6N139 Optocoupler DIP-8
6N139 Optocoupler DIP-8
VCEO(V):18V
IC(mA):60mA
VR(V):5V
IF(mA):25mA
Package:DIP-8

Product Details

Our advantages 

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description

The 6N138 and 6N139 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed integrated photo-detector logic gate with a strobable output in a plastic DiP8 package with different lead forming options.

A separate design between photodiode and transistor reduces the base-collector capacitance of the input transistor which improves the speed by several orders of magnitude over conventional phototransistor optocouplers.

Features

●High isolation 5000 VRMS

●DC input with transistor output

●Operating temperature range -55°C to 100℃

●REACH compliance

●Halogen free(Optional)

●MSL class 1

●Regulatory Approvals

●UL-UL1577

●VDE-EN60747-5-5(VDE0884-5)

●CQC-GB4943.1,GB8898

●cUL-CSA Component Acceptance Service Notice No. 5A


Applications

●Low current line receivers

●Current loop receivers

●Out interface to CMOS-LSTTL-TTL

●Pulse transformer replacement

●Computer-peripheral interface


6N139_00.jpg


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