Power semiconductor is a subdivision of the semiconductor industry. Although it is not as well known to the public as integrated circuits, its importance cannot be ignored. IGBT is a kind of power semiconductor. As the "CPU" in electronic power devices and systems, it is the main force of high efficiency, energy saving and emission reduction.
7th generation technology and process improvement.
IGBT , insulated gate Bipolar transistor is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), with high frequency, high voltage, high current, easy to switch, etc. Excellent performance, known as the "CPU" of power converters in the industry.
Data from TrendForce Industry Research Institute, a subsidiary of TrendForce, shows that the development of electric vehicles will drive the continuous growth of the IGBT market value. It is estimated that the IGBT market value will exceed US$5.2 billion in 2021. As the world's largest IGBT demand market, China's main market share is occupied by European, American and Japanese companies, but after years of hard work, a complete IGBT industry chain has been established. The main enterprises in the industrial chain——
IDM
CRRC Times Electric
Zhuzhou CRRC Times Electric Co., Ltd. is a joint-stock enterprise under CRRC. Its predecessor and parent company, CRRC Zhuzhou Electric Locomotive Research Institute Co., Ltd., was founded in 1959. It is a high-power IGBT industrialization base that integrates research, development and integration of complete sets of technologies such as chip manufacturing.
In 2008, CRRC Times Electric (then named "CSR Times Electric") acquired Dennis, a global IBGT manufacturer. In 2009, it built the first high-voltage IGBT module packaging line in China. Advanced production line for IGBT chips. At present, CRRC Times Electric's IGBT products have covered from 650V to 6500V, and have been applied in batches in high-speed rail, power grids, electric vehicles, wind power and other fields. In 2017, its high-voltage IGBT modules received orders in the power system, and successfully developed the world's largest capacity crimping type IGBT.
BYD Microelectronics
In 2003, BYD established Shenzhen BYD Microelectronics Co., Ltd. (ie its "Sixth Division"), which is committed to the development of integrated circuits and power devices and provides a complete set of solutions for product applications. Its IGBT R&D and manufacturing are mainly Responsible for BYD Microelectronics. In 2005, BYD formally established an IGBT R&D team, and established an IGBT module production line in 2007, completing the first sample assembly of IGBT modules for electric vehicles.
At present, BYD has successively mastered the links of IGBT chip design and manufacture, module design and manufacture, high-power device test application platform, power supply and electronic control, and has a complete IGBT industry chain. At the end of 2018, BYD officially released its self-developed automotive-grade IGBT 4.0 technology. TrendForce, a global market research organization, pointed out that BYD Microelectronics has rapidly risen in the automotive IGBT market by virtue of its terminal advantages, and has achieved a market share of more than 20% in China's automotive IGBT market, becoming the top three in China's sales. IGBT supplier.
Silan Micro
Hangzhou Silan Microelectronics Co., Ltd. was established in 1997. Starting from the integrated circuit chip design business, it has gradually built a chip manufacturing platform with characteristic processes, and has extended its technology and manufacturing platform to power devices, power modules and In the field of MEMS sensor packaging, a relatively complete IDM business model has been established.
At present, Silan Micro's 5-inch and 6-inch chip production lines have been running stably, and the 8-inch chip production line has also been successfully put into production. Research and development of gate MOSFET, fast recovery diode, MEMS sensor and other processes. In April this year, Silan Micro launched the 1350V RC-IGBT series products for household induction cookers. It is reported that the IGBTs it developed have passed strict tests by customers in many fields and have been introduced into mass production.
China Microelectronics
Jilin Huawei Electronics Co., Ltd. was established in 1999. It integrates power semiconductor device design and development, chip processing, packaging and testing, and product marketing. The official website information shows that it has 4 inches, 5 inches and 6 inches. Power semiconductor discrete device and IC chip production line, the chip processing capacity is 4 million pieces per year, the packaging resources are 2.4 billion pieces/year, and the module is 3.6 million pieces/year.
China Microelectronics mainly produces power semiconductor devices and ICs. At present, it has formed a series of products such as IGBT, MOSFET, SCR, SBD, IPM, FRD, BJT, etc. as the main marketing line. Its 650V~1200V Trench-FS IGBT platform products Client verified. In April this year, China Microelectronics plans to raise and invest in an 8-inch production line project. 600V-1700V IGBT chips of various voltage and current levels are one of the key points of the project.
Chongqing China Resources Micro
China Resources Microelectronics (Chongqing) Co., Ltd., the former AVIC (Chongqing) Microelectronics Co., Ltd., integrates semiconductor design, R&D, manufacturing and service, with power semiconductor devices and power/analog integrated circuits as its industrial base. For industrial electronics, consumer electronics, automotive electronics, 5G communication markets. It has technology development and manufacturing platforms for power devices, GaN, and MEMS sensors.
Chongqing CR Micro owns the first wholly-owned 8-inch power device wafer production line in China, with a monthly production capacity of 51,000 wafers, a process capacity of 0.18 microns, and an 8-inch special process production line. At present, the company has started the construction planning of 12-inch wafer production line and related packaging and testing lines, mainly producing power semiconductor products such as MOSFET, IGBT, and power management chips.
Taiji Shares
Hubei Taiji Semiconductor Co., Ltd. was established in 2004. It is one of the few companies in the field of high-power semiconductor devices in China that has mastered the front-end (diffusion) technology, the middle-way (chip manufacturing) technology, and the back-end (package testing) technology. ) technology, and master the core technology of high-power semiconductor device design, manufacture and form a large-scale production enterprise.
Taiji's main products are power semiconductor devices such as power thyristors, rectifiers, IGBT modules, power semiconductor modules, etc. It started the research and development of IGBT modules as early as 5 years ago, and now basically has IGBT design, packaging and testing capabilities. ability. Recently, Taiji Co., Ltd. has invested in a "new high-power semiconductor device industry upgrading project", which includes a monthly production of 40,000 IGBT modules (compatible with MOSFETs, etc.) packaging and testing lines.
Yangjie Technology
Yangzhou Yangjie Electronic Technology Co., Ltd. was established in August 2006. It is committed to the industrial development of power semiconductor chip and device manufacturing, integrated circuit packaging and testing and other fields. Its main products are various power electronic device chips, power Diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc.
It is understood that in terms of IGBT, Yangjie Technology held a 6-inch wafer line in Yixing in March 2018. At present, the production line has mass-produced IGBT chips, which are mainly used in the field of small household appliances such as induction cookers. Yangjie Technology stated on the interactive platform that in 2018, the company actually produced nearly 6,000 IGBT chips.
Kodak Semiconductor
Founded in 2007, Keda Semiconductor Co., Ltd. is a high-tech enterprise invested and established by Keda Group. It is mainly engaged in the design, production and sales of new power semiconductor devices (power electronic devices) such as IGBT, FRD and MOSFET. There are sales centers in Shenzhen, Zhejiang, Shandong and other regions.
According to the official introduction of Keda Semiconductor, it has a power device design center, a performance testing laboratory and a reliability laboratory, as well as a provincial design center and a provincial power semiconductor engineering center. In this field, we have developed a variety of products with independent intellectual property rights. Among them, 1200V IGBT is listed as a national key new product by the Ministry of Science and Technology. The products are widely used in induction cookers, low-power inverters, inverter welding machines, brushless motor controllers, and UPS. and other fields.
design
Zhongke Junxin
Jiangsu Zhongke Junxin Technology Co., Ltd. was established in 2011. It is a Sino-foreign joint venture high-tech enterprise focusing on the research and development of new power electronic chips such as IGBT and FRD. The predecessor of Zhongke Junxin is the three research teams of the Institute of Microelectronics of the Chinese Academy of Sciences, the Institute of Microelectronics of the Chinese Academy of Sciences, the China Internet of Things Research and Development Center and the Chengdu University of Electronic Science and Technology, which first started in the 1980s.
According to the official website of Zhongke Junxin, the company currently has market-competitive products including 650V, 1200V, and 1700V series IGBT chips, and has 222 patents, including 12 PCT patents. In terms of IGBT technology, Zhongke Junxin has developed a full series of IGBT chips with trench field termination (Trench-FS) voltages of 650V-6500V and single-chip currents of 8A-400A, which have successfully solved the problem of trench gate trench forming technology, carrier Enhancement technology, wafer thinning technology, backside high-energy ion implantation technology, backside laser annealing technology and other key process technologies.
Daxin Semiconductor
Ningbo Daxin Semiconductor Co., Ltd. was established in 2013. It is a Sino-foreign joint venture high-tech company mainly founded by overseas returnees. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD and other power semiconductor chips and devices. , with power semiconductors such as IGBT, MOSFET and FRDChip design and process integration technology, built IGBT product performance testing, application and reliability laboratory, has a complete IGBT module research and development production line with testing and manufacturing methods.
According to the official website of Daxin Semiconductor, its team has successfully developed IGBT chip technologies such as planar NPT, planar FS, trench NPT, and trench FS on the 8-inch and 6-inch wafer manufacturing platforms at the same time. Manufacturing IGBT chip products from 600V to 1700V, which can meet most application fields. In addition, Daxin Semiconductor has successfully developed a variety of IGBT module products, with voltage levels ranging from 600V to 3300V and current levels ranging from 10A to 1000A, which can be applied to inverter welding machines, frequency converters, induction heating, high-power power supplies, UPS, new energy Automotive, solar/wind power, SVG, etc.
Ziguang Microelectronics
Wuxi Ziguang Microelectronics Co., Ltd. (formerly Wuxi Tongfang Microelectronics Co., Ltd.) was established in 2006. It is a high-tech enterprise invested by Ziguang Tongxin Microelectronics Co., Ltd. It is a company focusing on advanced semiconductor power devices and integrated circuits. An integrated circuit design enterprise engaged in design and development, chip processing, packaging and testing and product sales.
According to the official website of Ziguang Microelectronics, the semiconductor power devices such as SJ MOSFET, DT MOSFET, HV VDMOS, IGBT, IGTO, Half Bridge Gate Driver and related power management integrated circuits developed and produced by the company are widely used in Energy saving, green lighting, wind power generation, smart grid, hybrid/electric vehicles, instrumentation, consumer electronics and other fields. In terms of IGBT, it is based on the actual application of IGBT, and uses NPT (non-punch-through) and trench FS (field-stop) IGBT technology to provide high-quality and reliable system solutions for high-power application customers.
Wuxi New Clean Energy
Wuxi New Clean Energy Co., Ltd. was established in 2013. Its main business is the R&D, design and sales of MOSFET, IGBT and other semiconductor power devices. The main products can be divided into chips and packaged products according to whether they are packaged or not, which are widely used in consumer Electronics, automotive electronics, industrial electronics and new energy vehicles/charging piles, intelligent equipment manufacturing, Internet of Things, photovoltaic new energy and other fields.
According to the official introduction of Wuxi New Clean Energy, its main products currently include 12V~200V trench power MOSFET (N-channel and P-channel), 30V~300V shielded gate power MOSFET (N-channel and P-channel) ), 500V~900V super-junction power MOSFET, 600V~1350V trench gate field stop IGBT, the relevant core technology has obtained a number of patent authorizations, and the four series of products have been recognized as high-tech products in Jiangsu Province.
Semipower
Xi'an Semipower Electronic Technology Co., Ltd. was established in 2008. It is a high-tech enterprise integrating R&D, production and sales. Its products include a full range of low-voltage to high-voltage MOSFETs, IGBTs, diodes, bridge stacks and power management ICs Wait. It is headquartered in Xi'an and has a provincial key laboratory, Xi'an Semiconductor Power Device Testing and Application Center.
It is understood that Semipower has developed IGBT power devices for 1200V/900V/650V since 2016, and the product performance indicators have reached the technical performance of similar foreign products. At present, its 600V/1200V FS series IGBT products are used in batches in industrial power supplies, 450V IGBT products are suitable for flash lamp applications and ignition applications, and NPT process 1200V/3300V IGBT series products are suitable for the automotive industry.
manufacture
Hua Hong Grace
Shanghai Huahong Grace Semiconductor Manufacturing Co., Ltd. is newly established by the merger of the former Shanghai Huahong NEC Electronics Co., Ltd. and Shanghai Grace Semiconductor Manufacturing Co., Ltd. It is the first company in the world to provide field-stop insulated gate bipolar transistors. (FS IGBT) mass production technology 8-inch integrated circuit chip manufacturing plant.
Hua Hong Grace has successfully mass-produced 1200V non-punch-through (NPT) IGBTs since 2011; in 2013, 600V-1200V FS IGBTs were mass-produced, and subsequently launched 600V, 1200V and 1200V with a number of cooperative units. , 1700V and other IGBT device processes, successfully solved the key process problems of IGBT, including silicon wafer warpage and backside process capability. It is reported that Huahong Hongli is currently the only wafer foundry in China that has a full set of backside processing technology for IGBTs, and is accelerating the research and development of 6500V ultra-high voltage IGBT technology.
Shanghai Advanced
Shanghai Advanced Semiconductor Manufacturing Co., Ltd., formerly known as Shanghai Philips Semiconductor Co., Ltd., a Sino-Dutch joint venture established in 1988, has 5-inch, 6-inch, and 8-inch wafer production lines, focusing on the manufacture of analog circuits and power devices. Since 2004, it has provided IGBT domestic and foreign foundry business.
Shanghai Advanced established IGBT backside process line in China in 2008, with complete IGBT process capabilities such as IGBT front, back, and testing. The voltage range of IGBT/FRD covers 650V, 1200V, 1700V, 3300V, 4500V, 6500V. Capabilities include PT, NPT, Field Stop, as well as planar and trench IGBTs. Its 6-inch fab focuses on planar IGBT and FRD process platforms, with voltages ranging from 1200V to 6500V, and its 8-inch fabs focus on Trench Field Stop IGBT process platforms, with voltages ranging from 450V to 1700V.
SMIC
SMIC is an integrated circuit manufacturing enterprise with the most comprehensive technology, the most complete supporting facilities, the largest scale and multinational operation in mainland China, providing 0.35 micron to 28 nanometer 8-inch and 12-inch chip foundry and technology Serve.
According to SMIC's official website, its IGBT platform has been established since 2015, focusing on the latest generation of field-stop IGBT structure, using the industry's most advanced and mainstream backside processing technology, including Taiko backside thinning process, wet method Etching process, ion implantation, backside laser annealing and backside metal deposition process, etc., have completed the independent research and development of a complete set of deep trench + wafer + field cutoff technology, and correspondingly launched 600V~1200V and other device processes, the technical parameters can reach the industry leading Level.
Founder Microelectronics
Shenzhen Founder Microelectronics Co., Ltd. was established in 2003 by Founder Group and other investors, focusing on providing customers with power discrete devices (such as DMOS, IGBT, SBD and FRD) and power integrated circuits (such as BiCMOS) , BCD and HV CMOS) and other fields of wafer fabrication technology.
According to the introduction on the official website, Founder Microelectronics has two 6-inch wafer production lines with a monthly production capacity of 60,000 wafers. Second, the monthly production capacity is planned to reach 80,000 pieces in the future. IGBT currently supports 430V, 600V Trench PT IGBT and 1200V, 1700V Planar NPT IGBT and other processes in time.
China Resources Shanghua
Wuxi China Resources Shanghua Technology Co., Ltd. is a subsidiary of China Resources Microelectronics Co., Ltd., which is responsible for the semiconductor business of China Resources Group. CR Shanghua provides customers with a wide range of wafer fabrication technologies, including BCD, Mixed-Signal, HV CMOS, RFCMOS, Embedded-NVM, BiCMOS, Logic, MOSFET, IGBT, SOI, MEMS, Bipolar and other standard processes and a series of customized chemical process platform.
According to the official website, China Resources Shanghua has the largest 6-inch foundry line and an 8-inch foundry line in China, with a monthly production capacity of more than 110,000 pieces for the 6-inch production line. The overall monthly production capacity is planned to be 60,000 pieces, and the process technology will be upgraded to 0.11 microns. In terms of IGBT, China Resources Shanghua announced in 2012 that it has completed the development of 600V and 1700V Planar NPT IGBT and 600V Trench PT IGBT process platform.
module
Jiaxing Star
Jiaxing Star Semiconductor Co., Ltd. was established in April 2005. It is a national high-tech enterprise specializing in the research and development, production and sales of power semiconductor components, especially IGBT modules. Its main products are power semiconductor components. Devices, including IGBT, MOSFET, IPM, FRD, SiC, etc., have successfully developed nearly 600 IGBT module products, with voltage levels ranging from 100V to 3300V and current levels ranging from 10A to 3600A.
In terms of technology, Jiaxing Star has developed a full range of planar gate NPT type 1200V IGBT chips and a full range of trench gate field stop 650V, 750V, 1200V and 1700V IGBT chips, solving the problem of thinning including 8-inch wafers. Technology, backside high-energy ion implantation technology, backside laser annealing activation technology and trench gate trench forming technology and other key process technologies. Data shows that in 2017, Jiaxing Star's market share in the field of IGBT modules ranked ninth in the world.
Core Energy
Shenzhen Xinneng Semiconductor Technology Co., Ltd. was established in 2013. It is jointly invested by Shenzhen Zhengxuan Technology, Shenzhen State-owned Assets Supervision and Administration Commission, Shenzhen Talent Innovation Fund, Fortune Ventures, Fangguang Capital, Xiamen Falcon and other well-known institutions. Research and development, application and sales of IGBT chips, IGBT driver chips and high-power intelligent power modules.
At present, Xinneng focuses on 600V and 1200V medium and small power IGBT products, and has a complete product sequence in four fields of IGBT single tube, IPM, IGBT module and HVIC, and the product performance is leading in China. Products are widely used in industrial inverters, servo drives, inverter home appliances, induction cookers, industrial power supplies, inverter welding machines and other fields; for medium and high power products, Xinneng can also provide systematic solutions: 650V/450AAnd 1200V/450A EconoDUAL intelligent IGBT power module, 34mm module, 62mm module and other products have been unanimously recognized by end customers.
Xi'an Yongdian
Xi'an CRRC Yongdian Electric Co., Ltd. was established in 2005. It is a high-tech enterprise wholly-owned by CRRC Yongji Electric Co., Ltd. specializing in the research and development, production, sales and service of power electronic products. The main products include IGBT modules, IPM modules, rectifiers, thyristors, combined components and other power semiconductor devices, as well as converters, power modules, urban rail ground rectifiers, subway one-way conduction devices, chargers and other devices.
In December 2011, the Shaanxi Provincial Department of Industry and Information Technology hosted the Xi'an Yongdian "6500V/600A, 3300V/1200A, 1700V/1200A IGBT Module" new product in Xi'an Economic and Technological Development Zone CNR Yongji R&D Center New technology appraisal meeting. Experts at the meeting agreed that the technical parameters of its 6500V/600A, 3300V/1200A and 1700V/1200A IGBT modules have reached the international advanced level as a whole, and the 6500V/600A product index has reached the domestic level, and they agreed to pass the provincial new product appraisal.
Macro Technology
Jiangsu Hongwei Technology Co., Ltd. was established in August 2006, based on the power electronic components industry, the business scope includes design, research and development, production and sales of new power semiconductor chips, discrete devices and modules, such as FRED, VDMOS , IGBT chips, discrete devices, standard modules and custom modules (CSPM), and provide modular design, manufacturing and system solutions for high-efficiency and energy-saving power electronic devices.
In 2018, Macro Micro Technology and BAIC New Energy established the Macro Micro-BAIC New Energy IGBT joint laboratory, planning to jointly build the motor controller industry from chip design to module design and packaging to motor controller design and production chain. Macro Micro Technology's annual report shows that in 2018, its IGBT modules for electric vehicles have gradually increased in volume in the SVG industry, and customer-customized products have also begun to be sold in batches.
Weihai Xinjia
Weihai Xinjia Electronics Co., Ltd. was established in 2004 with a registered capital of 20 million yuan. It is a national high-tech enterprise specializing in the design, research and development, production and sales of new power electronic devices and their application complete products.
Weihai Xinjia is one of the drafting units of IGBT national standard and AC solid state relay industry standard. The National Development and Reform Commission's special project for the industrialization of new power electronic devices, the Ministry of Industry and Information Technology's electronic development fund project and many other national, provincial and ministerial-level projects.
Yinmao Microelectronics
Nanjing Yinmao Microelectronics Manufacturing Co., Ltd. was established in November 2007 and is the holding company of Jiangsu Yinmao (Holdings) Group Co., Ltd. According to the official website, the company's first-phase project is mainly engaged in the research and development, manufacturing and sales of new power electronic modules with independent intellectual property rights, fully airtight and semi-airtight high-reliability hybrid circuit electronic devices, and large-scale converter technology core components. It has an annual production capacity of 650,000 general-purpose power modules and more than 100,000 high-voltage high-power modules. It is currently one of the largest production bases of power electronic power modules in China.
On June 14, 2019, entrusted by Jiangsu Science and Technology Department and Nanjing Science and Technology Bureau, Lishui District Science and Technology Bureau organized Yinmao Microelectronics to undertake the "Jiangsu High-power IGBT Module Engineering Technology Research Center" project passed the acceptance.
