Today, we will introduce the Low-Voltage P-channel MOS BSS84 from Slkor, a P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) package using Trench MOSFET technology. It is an ideal choice for mobile devices, power management, and LED lighting etc.

Introductions:

MOS, short for MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), is a type of semiconductor device composed of metal, oxide, and semiconductor layers. Its working principle is based on the channel effect of electric charge on the gate metal layer between two semiconductor layers separated with oxide layer. By controlling the electric field on the metal electrode, the charge distribution in the semiconductor is controlled. It has the advantages of low-voltage drive, low power consumption, high-speed switching, and high input impedance, and is widely used in electronic circuits.

Challenges:

High performance low-voltage MOS devices must feature low on-resistance, low threshold voltage, good temperature characteristics, and with high-density process. The lower the on-resistance, the stronger conduction ability. The performance of low-voltage MOS changes with temperature. At high temperatures, it’s conduction ability will decrease, but the leakage current will increase, leading to bad performance of the MOS.

Solutions:

This SOT-23 P-channel MOS BSS84 from Slkor has a drain-source voltage of -50V and a continuous drain current of -130mA, a power rating of 200mW. It’s on-resistance is 10Ω@5V, 100mA, it’s turn on threshold voltage is -2.5V@250uA, and the input capacitance is 73pF@25V. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.