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【Daily Highlight】MMBT5551 600 mA, 160 V NPN General Purpose Bipolar Junction Transistor

release time:2023-07-11Author source:SlkorBrowse:5154

Today, we will introduce the MMBT5551 600 mA, 160 V NPN General Purpose Bipolar Junction Transistor in a small SOT-23 Surface-Mounted Device (SMD) plastic package.  

Description 

This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers.

Features

● Epitaxial planar die construction.

● Complementary PNP type available MMBT5401.

● also available in lead free version.

Applications

Ideal fot medium power amplification and switching.

Quick reference data

Symbol

Parameter

Conditions

Max

Unit

VCEO

collector-emitter voltage

open base

160

V

IC

collector current

0.6

A

VCEsat

collector-emitter

saturation voltage

IC = 50mA; IB = 10mA

0.5

V


About Slkor

With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs,  diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.


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