【Daily Highlight】SL2301 P-Channel Enhancement Mode Power MOSFET

release time:2023-06-20Author source:SlkorBrowse:5072

Today, we will introduce the SL2301 SOT-23 Low-Voltage P-channel MOSFET from Slkor, a P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Ø1.8 V R_DSon rated for Low Voltage Gate Drive

ØVery fast switching

ØTrench MOSFET technology

Applications

ØRelay driver

ØHigh-speed line driver

ØHigh-side loadswitch

ØSwitching circuits

Quick reference data

Symbol	Parameter	Conditions	Max	Unit
V_DS	drain-source voltage	T_amb = 25°C	−20	V
V_GS	gate-source voltage	T_amb = 25°C	±10	V
I_D	drain current	T_amb= 25 °C V_GS = −4.5 V	−2.8	A
R_DSon	drain-source on-state resistance	T_j= 25 °C V_GS = −4.5 V	100	mΩ

About Slkor

With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs, diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.

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