According to data from GGII, in 2023, the sales volume of industrial robots in China reached 316,000 units, a year-on-year increase of 4.29%. This growth trend indicates a slight growth momentum in the market, and it is expected that the market sales volume will surpass 320,000 units in 2024. This demonstrates the continued development momentum of the Chinese industrial robot market. Interestingly, in the industrial robot market in 2023, there were significant changes in the market share between domestic and foreign brands. According to GGII's sensitive statistical data, the market share of domestic industrial robots exceeded 50% for the first time, reaching 52.45%, achieving a lead in sales volume for the first time. The development of the robotics industry is to a certain extent based on the rapid development in the semiconductor and electronics fields. SLKOR Micro, as a company dedicated to semiconductor technology research and production, is also involved in the industrial robot field. SLKOR Micro provides power devices such as high, medium, and low voltage MOS field-effect transistors, thyristors, bridge stacks, as well as power management chips and ADC chip series. These products can meet the needs of applications in high-end equipment, robots, IoT, smart wearable devices, and IoT, among other areas. With the continuous growth of the industrial robot market, the demand for related components and technologies is also expanding. SLKOR Micro will continue to innovate and provide more reliable and efficient products to meet market demands.

The high-voltage MOSFET SL11N65CF1 introduced by SLKOR is a high-performance power MOSFET that utilizes the company's advanced super-junction technology for production, offering outstanding performance and reliability. This advanced technology is specially tailored to minimize conduction losses, providing excellent switching performance and the ability to withstand high-energy pulses in avalanche and commutation modes, crucially supporting the efficient operation of electronic systems.

The parameter design of SL11N65CF1 is excellent: it is an N-channel MOSFET with a drain-source voltage (Vdss) of up to 650V, a continuous drain current (Id) of up to 11A, a power dissipation (Pd) of 28W, an on-state resistance (RDS(on)@Vgs,Id) of 318mΩ@10V, 4.0A, a threshold voltage (Vgs(th)@Id) of 4.5V@250μA, and is packaged in TO-220F. These parameters allow SL11N65CF1 to perform excellently in various high-voltage power applications, ensuring system stability and efficiency.

In the design of modern electronic devices and systems, high-voltage MOSFETs play a crucial role. The MOSFET SL11N65CF1, with its outstanding features, provides users with excellent performance and reliability. SL11N65CF1 has high ruggedness and low gate charge, where gate charge refers to the amount of charge that needs to be injected or removed during the switching process. Low gate charge means that the device has faster response speed and switching time, while high ruggedness allows SL11N65CF1 to exhibit excellent robustness.

In terms of applications, SL11N65CF1 is widely used in power systems, particularly suitable for power switches, power conversion, and power metering fields. In industrial automation control systems, it can also be used in various drive circuits and switch circuits to achieve precise control of industrial equipment, thereby improving system efficiency and reliability.

Overall, SLKOR' high-voltage MOSFET SL11N65CF1 stands out for its excellent performance, stability, and reliability, showcasing significant application potential in power systems and industrial control fields. With continuous technological advancements, SLKOR' products will leverage their advantages in more application scenarios, driving innovation and development in the electronics industry.