In today's fast-evolving electronic era, the stability and reliability of high-performance electronic devices have become key factors in market competition. As electronic devices grow increasingly complex, their demand for circuit protection components continues to rise. The Transient Voltage Suppressor Diode (TVS), an essential circuit protection element, is playing an increasingly important role. In this article, we focus on the bidirectional SMF28CA Transient Voltage Suppressor Diode and, in conjunction with the announcement of Tongguang Semiconductor's new project to produce 200,000 8-inch silicon carbide single crystal substrates annually, explore the technical strength and industry impact behind this innovative product.

Slkor Transient Protection Diode SMF28CA product photo

The SMF28CA Transient Voltage Suppressor Diode has gained significant attention in the market due to its unique performance and broad application range. As a bidirectional diode, it is capable of providing effective transient voltage suppression under both forward and reverse voltages. Its reverse working voltage (Vrwm) is 28V, ensuring that the diode remains in a high-resistance state under normal operating voltages without interfering with the circuit. The breakdown voltage range, from 31.1V to 34.4V, allows the diode to quickly conduct when faced with transient overvoltage, clamping the voltage to a safe level.

Slkor Transient Protection Diode SMF28CA specification

Notably, the reverse leakage current (Ir) of the SMF28CA is only 4.4μA, significantly reducing power consumption under normal operating conditions and improving circuit energy efficiency. Even more importantly, the diode can withstand a peak pulse current (Ipp) of up to 45.4A with a pulse width of 10/1000μs, and the maximum clamping voltage is only 1V. This means that, under extreme transient conditions, the diode can quickly and effectively reduce the voltage to a safe level, protecting the circuit from damage. Furthermore, its peak pulse power (Ppp) reaches 200W under the same pulse width, enhancing its ability to handle high-energy transient surges.

Parameters of Slkor Transient Protection Diode SMF28CA

These exceptional performances are attributed to advanced semiconductor materials and manufacturing processes. As a leading company in the semiconductor materials field, Tongguang Semiconductor recently announced the launch of a project to produce 200,000 8-inch silicon carbide single crystal substrates annually. This project will undoubtedly provide strong support for the manufacturing of numerous high-performance semiconductor devices, including Transient Voltage Suppressor Diodes. With a total investment of 882 million yuan, the project underscores Tongguang Semiconductor’s commitment to technological innovation and capacity expansion, signaling a significant leap in China's semiconductor materials industry.

Silicon carbide (SiC), a new type of semiconductor material, exhibits superior performance over traditional silicon materials under extreme conditions such as high voltage, high frequency, and high temperature, thanks to its high breakdown field strength, high thermal conductivity, and high saturation electron drift velocity. As a result, silicon carbide single crystal substrates are widely used in the manufacture of high-performance power devices such as MOSFETs, IGBTs, and Transient Voltage Suppressor Diodes. This project by Tongguang Semiconductor will significantly increase China’s self-sufficiency in silicon carbide single crystal substrates, reduce reliance on imported materials, and drive the autonomous and controllable development of the entire semiconductor industry chain.

When looking at the SMF28CA Transient Voltage Suppressor Diode in combination with Tongguang Semiconductor's silicon carbide project, it becomes clear that technological innovation and material upgrades are key drivers in enhancing the performance of electronic products and upgrading industries. The SMF28CA, with its excellent protection performance and wide application prospects, is an ideal choice for circuit protection in electronic devices. Meanwhile, Tongguang Semiconductor's silicon carbide project provides a solid foundation and broad prospects for the manufacture of high-performance semiconductor devices. We believe that, in the future electronic market, Transient Voltage Suppressor Diodes like the SMF28CA and silicon carbide-based semiconductor devices will play an increasingly important role, leading electronic products towards greater efficiency, reliability, and intelligence.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.