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release time:2025-01-06Author source:SlkorBrowse:3783
In recent years, the wearable device market has shifted from a period of enthusiasm to a more rational phase. For companies, this transition not only tests their product innovation capabilities but also places higher demands on their fundraising abilities. In 2024, despite a tightening global funding environment, the wearable device market has remained vibrant, with many market-potential companies successfully securing new rounds of financing. In this context, semiconductor companies have gained particular attention, and among them, the transient voltage suppression (TVS) diode SMBJ8.0CA has stood out due to its outstanding performance in the wearable device sector.
As a bidirectional transient voltage suppression diode, the SMBJ8.0CA features low voltage and high energy characteristics, making it an ideal choice for protecting sensitive electronic components in wearable devices. Its detailed specifications are as follows:
Polarity: Bidirectional, meaning the SMBJ8.0CA provides voltage protection in both forward and reverse directions, effectively addressing transient voltage surges in the circuit.
Reverse Working Voltage (Vrwm): 8V, ensuring the device’s protection mechanism is not triggered during normal operating voltages, thus maintaining the stability of the circuit.
Breakdown Voltage (Minimum/Maximum): 8.89V/10.23V, this range marks the threshold at which the SMBJ8.0CA begins to conduct and absorb transient voltage, offering both safety and efficiency in its design.
Slkor Transient Protection Diode SMBJ8.0CA product photo
Reverse Leakage Current (Ir): 50μA, which, although slightly higher than some high-end TVS diodes, remains within an acceptable range and does not significantly impact circuit performance in practical applications.
Peak Pulse Current (Ipp) @ 10/1000μs: 44.1A, indicating the SMBJ8.0CA's excellent current absorption ability when subjected to high-energy transient pulses, rapidly diverting transient voltage to ground to protect sensitive components in the circuit.
Slkor Transient Protection Diode SMBJ8.0CA specification
Maximum Clamping Voltage: 13.6V, during transient pulses, the SMBJ8.0CA clamps the voltage below this level, effectively preventing damage from excessive voltage to downstream circuits.
Peak Pulse Power (Ppp): Although the exact value is not specified, based on the SMBJ8.0CA’s peak pulse current and maximum clamping voltage, it can be inferred that it has a high power handling capability when absorbing transient pulses.
Parameters of Slkor Transient Protection Diode SMBJ8.0CA
The SMBJ8.0CA has a wide range of applications in wearable devices, particularly in circuits that require bidirectional protection and handling of high-energy pulses. For instance, in devices like smartwatches and smart glasses, the SMBJ8.0CA can be used to protect critical components such as power management systems, sensors, processors, and communication modules from transient voltage interference and damage caused by lightning, electrostatic discharge (ESD), and other transient voltage events. Its bidirectional protection feature allows the SMBJ8.0CA to handle transient voltage surges from both directions, providing comprehensive voltage protection for wearable devices.
As the wearable device market continues to grow, consumers’ demands for product performance, battery life, and safety are increasing. The SMBJ8.0CA, with its excellent performance as a transient voltage suppression diode, has shown tremendous potential in the wearable device market. On the one hand, it can be used in the power management systems of wearable devices to protect batteries and power circuits from transient voltage surges, thus extending the device's battery life and overall lifespan. On the other hand, the SMBJ8.0CA can also be used to protect key components such as sensors, processors, and communication modules, enhancing the device’s stability and reliability.
Take, for example, a well-known smartwatch brand. In their latest model, they adopted the SMBJ8.0CA as a circuit protection component. In actual use, the SMBJ8.0CA successfully withstood multiple transient voltage surges from the power grid and electromagnetic environment, protecting key components like the battery, processor, and communication modules from damage. Furthermore, thanks to the SMBJ8.0CA’s compact package and low cost, the brand was able to reduce production costs while ensuring product performance, thus enhancing its competitiveness in the market.
In summary, the SMBJ8.0CA, as an outstanding bidirectional transient voltage suppression diode, plays a crucial role in the wearable device sector. Its excellent circuit protection capability, compact package, and low cost make it an ideal solution for circuit protection in wearable devices. As the wearable device market continues to evolve and electronic technology advances, the SMBJ8.0CA is expected to demonstrate its unique value and appeal in more fields, contributing significantly to the development of wearable devices.
Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.
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