In the face of a lack of core technology, the call for domestic substitution in the Chinese chip industry is growing louder. With strong support from national policies, domestic chip manufacturers have experienced explosive growth, and the self-sufficiency rate of domestically produced chips has increased from less than 5% to 20%~30%. It is predicted that by 2025, the self-sufficiency rate of domestically produced chips is expected to further increase. As a national high-tech enterprise, SLKOR Micro actively responds to the national call and is committed to the research and production of domestically produced chips. The company has obtained ISO9001 quality management system certification and European Union certifications including RoHS and REACH. With excellent quality and standardized services, SLKOR Micro has quickly emerged in the wave of domestic substitution, continuously increasing its brand awareness, reputation, and market share. SLKOR Micro mainly produces three series of products: diodes, transistors, power devices, and power management chips. In addition, they have also launched new products such as Hall sensors, ADCs, and BMS, and have accumulated years of technical expertise in dedicated MCUs and interface chips. These products are widely used in various industries, including communications, consumer electronics, home appliances, and new energy, among others.

With the rapid development of electronic technology, MOSFETs, as an important semiconductor device, have gradually expanded their applications. MOSFETs are widely used in various power equipment, automation control systems, and new energy devices. SLKOR Micro Semiconductor has recently launched the SL49N10G, a medium-voltage N-channel MOSFET, which features advanced trench cell design and excellent parameter characteristics. It can meet the requirements of applications such as motor drivers, DC-DC converters, and more.

The SL49N10G has a drain-source voltage of 100V, a continuous drain current of up to 49A, an on-resistance of 7.6mΩ @ 10V, 20A, a threshold voltage of 2V @ 250uA, and is packaged in a PDFN (3.3x3.3). These parameter characteristics give it great advantages in various applications. Firstly, the high drain-source voltage of up to 100V can meet the requirements of various high-voltage applications. Secondly, the continuous drain current of 49A enables the SL49N10G to support larger load currents, making it suitable for motor drivers, DC-DC converters, and other fields. In addition, the low on-resistance can better control switch losses, improve circuit efficiency, and the low threshold voltage makes it easier to control the device. Finally, the package size of PDFN (3.3x3.3) is compact, allowing for flexible layout in tight circuit boards. Therefore, it not only meets the needs of high-performance electronic devices but is also more suitable for micro, portable electronic devices.

From a design perspective, this product adopts SLKOR Micro Semiconductor's advanced trench cell design, which results in a compact overall structure and excellent heat dissipation performance. This design enables faster switching speeds and lower switch losses. Additionally, the SL49N10G has passed 100% UIS (Unclamped Inductive Switching) and Rg (Gate Resistance) tests, ensuring its stability and reliability.

Compared to other models of MOSFETs, the SL49N10G has a lower on-resistance and higher drain-source voltage. This makes it suitable for applications such as motor drivers, DC-DC converters, delivering higher efficiency and better performance. On-resistance is a measure of the resistance when current flows through the MOSFET during the on-state. The lower on-resistance of the SL49N10G means that the current encounters less resistance during the on-state, resulting in reduced power consumption and heat generation. This translates to higher efficiency and better performance, especially in applications like motor drivers and DC-DC converters that require high performance. On the other hand, drain-source voltage refers to the maximum voltage the MOSFET can handle in the on-state. With a drain-source voltage of up to 100V, the SL49N10G can be applied in a wider range of scenarios, particularly in circuits that deal with high voltages.

About SLKOR:

SLKOR's high-end products include silicon carbide (SiC) diodes, SiC MOSFETs, IGBTs, and the fifth-generation ultra-fast recovery power diodes, which can meet the needs of new energy vehicles, high-end equipment, communication power equipment, solar photovoltaic, medical equipment, industrial automation, and other industries. SLKOR's general-purpose products include Schottky diodes, ESD protection diodes, TVS transient suppression diodes, general-purpose diodes, and transistors. The power devices include high, medium, and low voltage MOSFETs, thyristors, bridge stacks, as well as power management chips such as LDO, AC-DC, and ADC chip series. Additionally, complementary products include Hall sensors, high-speed optocouplers, crystal oscillators, and so on. These products are widely used in smartphones, laptops, robots, smart homes, the Internet of Things, LED lighting, 3C digital products, smart wearable devices, and various other applications.