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【Daily Highlight】BSS123 N-Channel TrenchMOS transistor Logic level FET

release time:2023-06-27Author source:SlkorBrowse:5607

Today, we will introduce the BSS123 Medium-Voltage N-Channel MOSFET from Slkor, which is supplied in the SOT23 subminiature surface mounting package.


Description

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Features

• ’Trench’ technology

• Extremely fast switching 

• Logic level compatible

• Subminiature surface mounting package

Applications

• Relay driver

• High-speed line driver

• Telephone ringer

Quick reference data

Symbol Parameter Conditions Max Unit
VDSS drain-source voltage Tamb = 25°C 100 V
VGS gate-source voltage Tamb = 25°C ±20 V
ID drain current Tamb = 25 °C
V
GS = 10 V
150 A
RDSon drain-source on-state resistance Tj = 25 °C
V
GS = 10 V
I
D= 120mA
3.5


About Slkor

With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs,  diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.


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