Introduction

In today's increasingly complex electronic environments, transient voltage has become a significant threat to the stability and lifespan of devices. To effectively address this challenge, Transient Voltage Suppression (TVS) diodes, with their excellent performance, play a crucial role in circuit protection. This article delves into the exceptional TVS diode, SLESD3Z5V0C, providing an in-depth analysis of its key parameters and exploring its applications and value in circuit protection.

Slkor Transient Protection Diode SLESD3Z5V0C product photo

1. Overview of SLESD3Z5V0C's Key Parameters

Reverse Working Voltage (Vrwm): 5V

Breakdown Voltage (Min/Max): 5.6V / 7.8V

Reverse Leakage Current (Ir): 1μA

Peak Pulse Current (Ipp) @ 10/1000μs: 8A

Peak Pulse Current (Ipp) @ 80/20μs: (Value depends on product characteristics, typically similar to or slightly different from 10/1000μs)

Maximum Clamping Voltage: (Specific value should refer to product datasheet)

Peak Pulse Power (Ppp) @ 10/1000μs: 100W

Slkor Transient Protection Diode SLESD3Z5V0C product photo

Parameters of Slkor Transient Protection Diode SLESD3Z5V0C

2. Detailed Parameter Analysis and Practical Applications

Reverse Working Voltage and Breakdown Voltage

The reverse working voltage of the SLESD3Z5V0C is 5V, ensuring that under normal operating conditions, the diode remains in its off-state and conducts minimally, thereby reducing circuit power consumption. Its breakdown voltage range is between 5.6V and 7.8V. This design ensures that when transient voltages exceed the threshold, the diode will quickly conduct, effectively limiting the overvoltage amplitude and providing precise protection for the downstream circuit.

Reverse Leakage Current

Reverse leakage current is an important indicator of current leakage when the TVS diode is in its reverse blocking state. The SLESD3Z5V0C features a remarkably low reverse leakage current of just 1μA, ensuring the stability and reliability of the diode during extended operation, while reducing power consumption and temperature rise caused by leakage.

Peak Pulse Current

The peak pulse current is a critical parameter for assessing the ability of a TVS diode to withstand transient events. The SLESD3Z5V0C handles a peak pulse current of 8A under 10/1000μs pulses, and also performs excellently under 80/20μs pulses. This indicates that even when subjected to high-intensity transient voltage surges, the SLESD3Z5V0C maintains stable performance, offering continuous and effective protection.

Maximum Clamping Voltage and Peak Pulse Power

The maximum clamping voltage determines the level at which the TVS diode can clamp the overvoltage during a transient voltage event. Although the specific clamping voltage value for the SLESD3Z5V0C is not provided, its breakdown voltage and design characteristics suggest a reasonable clamping voltage level that effectively protects downstream circuit components. Additionally, the diode can handle a peak pulse power of 100W under 10/1000μs pulses, ensuring it can withstand various transient voltage events.

3. Advantages of SLESD3Z5V0C in Circuit Protection

Comprehensive Protection: The bidirectional protection feature of the SLESD3Z5V0C allows it to handle both positive and negative transient voltage threats, providing comprehensive protection for circuits.

Low Power Consumption: The extremely low reverse leakage current reduces circuit power consumption, enhancing the energy efficiency of the device.

High Reliability: The excellent parameters and stable performance of the SLESD3Z5V0C ensure its reliability over prolonged periods of operation.

Wide Application: The SLESD3Z5V0C is suitable for various electronic devices, including consumer electronics, communication equipment, industrial control, and automotive electronics.

4. Conclusion

In conclusion, the transient voltage suppression diode SLESD3Z5V0C demonstrates outstanding performance and broad application prospects in the field of circuit protection. As electronic engineers, we should fully understand and leverage this excellent component to contribute to the reliability and stability of electronic devices. Moving forward, it is expected that the SLESD3Z5V0C will continue to exert its advantages, providing efficient and reliable circuit protection solutions across a wide range of fields.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.