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【Daily Highlight】SL15N10A N-Channel Power MOSFET

release time:2023-06-21Author source:SlkorBrowse:5857

Today, we will introduce the SL15N10A TO-252 Low-Voltage N-Channel Power MOSFET from Slkor. The SL15N10uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

Features

ØHigh density cell design for ultra Rdson

ØFull characterized avalanche voltage and current

ØGood stability and uniformity with high EAS

ØExcellent package for good heat dissipation

ØSpecial process technology for high ESD capability

Applications

ØPower switching application

ØHard switched and high frequency circuits

ØDC/DC converter

ØBattery switch

Quick reference date

Symbol Parameter Conditions Max Unit
VDS drain-source voltage Tamb = 25°C 100 V
VGS gate-source voltage Tamb = 25°C ±20 V
ID drain current Tamb = 25 °C
V
GS = 100 V
15 A
RDSon drain-source on-state resistance Tj = 25 °C
V
GS = 10 V
I
D= 8A
115

About Slkor

With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs,  diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.


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