Service hotline
+86 0755-83044319
release time:2023-06-21Author source:SlkorBrowse:5132
Features
ØHigh density cell design for ultra Rdson
ØFull characterized avalanche voltage and current
ØGood stability and uniformity with high EAS
ØExcellent package for good heat dissipation
ØSpecial process technology for high ESD capability
Applications
ØPower switching application
ØHard switched and high frequency circuits
ØDC/DC converter
ØBattery switch
Quick reference date
Symbol | Parameter | Conditions | Max | Unit |
VDS | drain-source voltage | Tamb = 25°C | 100 | V |
VGS | gate-source voltage | Tamb = 25°C | ±20 | V |
ID | drain current |
Tamb = 25 °C VGS = 100 V |
15 | A |
RDSon | drain-source on-state resistance |
Tj = 25 °C VGS = 10 V ID= 8A |
115 | mΩ |
With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs, diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.
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