Cree | Wolfspeed introduces advanced X- band radar devices

Enabling high-performance RF power solutions

Four new GaN-on-SiC MMIC devices help designers improve the size, weight and power of RF systems.

Cree l Wolfspeed, the global leader of silicon carbide (SiC) technology, recently introduced four new multi-pole GaN-on-SiC monolithic microwave integrated circuits (MMIC) devices, further expanding the range of radio frequency (RF) solutions, which are suitable for pulse and continuous wave X- band phased array applications including maritime affairs, meteorological monitoring and emerging UAV system radars.

With Wolfspeed GaN-on-SiC technology, these new devices can provide high power added efficiency (PAE) in small and industry-standard packages, thus helping designers to maximize their performance in smaller systems with less power consumption.

Jim Milligan, senior director in charge of foundry and aerospace business of Cree | Wolfspeed, said, "Cree | Wolfspeed's new X- band devices provide design engineers with a wealth of options, and are suitable for systems that require high-efficiency launch solutions in demanding sizes, such as those required in active phased array radar applications. With the adoption of Wolfspeed GaN-on-SiC solution, the smaller size, lighter weight, higher power (SWaP) and performance required by key RF systems will be enabled to reach new heights. "

Our rich X- band product portfolio provides solutions that support multi-level gains, thus reducing the number of devices required in the transmission chain. They include different power levels to optimize system performance and provide multiple platforms to optimize system architecture. Browse Table 1 for more product details and performance data.

The new amplifier continues to expand the product portfolio. Their excellent performance shows Cree | Wolfspeed's decades of GaN-on-SiC expertise, helping to support aerospace and other markets. At the same time, it also reflects the unremitting pursuit of developing innovative and industry-leading gallium nitride (GaN) solutions for a wide range of RF applications. 

Table 1

Note: All the devices listed above have ECCN of 3A001.b.2

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