In today's fast-paced technological landscape, every advancement in semiconductor technology has a profound impact on the global electronics industry. On March 5, 2025, GaNren Semiconductor Co., Ltd. (hereinafter "GaNren Semiconductor") announced a milestone achievement – the successful release of the world’s first fourth-generation 8-inch gallium oxide (Ga2O3) single crystal. This breakthrough not only highlights GaNren Semiconductor's technological leadership in the semiconductor materials sector but also injects new vitality into the semiconductor industry in China and worldwide. At the same time, their product in the transient voltage suppression diode field—the SMAJ12CA—demonstrates the company’s strong capabilities in electronic components with its outstanding performance.

Slkor Transient Protection Diode SMAJ12CA product photo

The 8-inch gallium oxide single crystal launched by GaNren Semiconductor marks a significant innovation in the field of semiconductor materials. As an emerging wide bandgap semiconductor material, gallium oxide is widely regarded for its excellent electrical properties and thermal stability, showing promising applications in high-voltage, high-frequency, and high-power electronic devices. However, the growth technology for gallium oxide single crystals has long been a bottleneck limiting its widespread application. GaNren Semiconductor has successfully overcome this technological challenge through a fully self-innovated casting method, achieving the growth of 8-inch gallium oxide single crystals and producing corresponding wafer substrates. This achievement not only sets a new global record for the size of gallium oxide single crystals but also marks China’s leading position in the 8-inch gallium oxide material technology era.

Slkor Transient Protection Diode SMAJ12CA specification

In the field of transient voltage suppression diodes, the SMAJ12CA from Slkor Semiconductor also excels. The SMAJ12CA is a bidirectional transient voltage suppression diode with a reverse working voltage (Vrwm) of 12V. It maintains a low leakage current under normal operating voltage, ensuring the stability of circuits. Its breakdown voltage range is between 13.3V and 14.7V, providing reliable protection for circuits. In the event of transient over-voltage surges, the SMAJ12CA quickly conducts to clamp the over-voltage to a safe level, with a maximum clamping voltage of just 19.9V, effectively protecting subsequent circuits from damage. Furthermore, the SMAJ12CA has a low reverse leakage current of 5uA and can withstand a peak pulse current of 20.1A (under a 10/1000μs waveform), ensuring stable performance even in harsh environments.

Parameters of Slkor Transient Protection Diode SMAJ12CA

The successful development of the 8-inch gallium oxide single crystal is of profound industrial significance for the semiconductor industry. Firstly, it greatly increases the usable area of gallium oxide material, reducing production costs and making large-scale production of gallium oxide-based electronic devices possible. Secondly, the introduction of 8-inch wafer substrates will promote the rapid development of high-performance electronic products such as gallium oxide-based power devices and high-frequency devices, providing strong technological support for emerging fields such as 5G communications, new energy vehicles, and smart grids. Additionally, this breakthrough will stimulate the development of upstream and downstream industries, creating new economic growth points and driving the overall upgrade of China’s semiconductor industry.

The excellent performance of the SMAJ12CA enables it to play a crucial role in over-voltage protection for electronic devices. Whether in communication equipment, computer systems, industrial automation devices, or automotive electronics, the SMAJ12CA offers reliable transient over-voltage protection, ensuring the normal operation of equipment and the safety of data. With the rapid development of emerging technologies such as 5G communication, the Internet of Things, and new energy vehicles, the demand for high-performance transient voltage suppression diodes like the SMAJ12CA will continue to grow, offering broad market prospects for GaNren Semiconductor.

In conclusion, GaNren Semiconductor’s dual breakthroughs in semiconductor materials and electronic components not only showcase the company’s strong technological innovation capabilities but also inject new energy into the development of the global semiconductor industry. In the future, with the widespread application of the 8-inch gallium oxide single crystal and the popularization of high-performance electronic components like the SMAJ12CA, GaNren Semiconductor will continue to lead semiconductor technological innovation and contribute to the advancement of the global electronics industry.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.