In today’s rapidly advancing world of technological innovation, every small electronic component plays a crucial role in driving progress. The P6SMB6.8A transient voltage suppression diode launched by Slkor, with its excellent electrical performance and reliable protection capabilities, provides a solid safeguard for the safe operation of integrated circuits. At the same time, the official launch of Guangdong Hanqi Semiconductor Co., Ltd.'s full-chip micro DFN/QFN packaging project marks an important milestone in China’s advancement in automotive-grade chips and third-generation semiconductor packaging technology, signaling new development opportunities for the semiconductor industry.

Slkor Transient Protection Diode P6SMB6.8A product photo

As a leader in the field of circuit protection, the P6SMB6.8A features a reverse working voltage (Vrwm) of 6.8V, effectively preventing reverse current under normal operating conditions, thus ensuring circuit stability and efficiency. Its breakdown voltage range is between 6.45V and 7.14V, and this precise voltage window design enables the P6SMB6.8A to respond swiftly to transient overvoltage events, directing the excess voltage to the ground and effectively protecting subsequent circuits from damage. This feature is especially important in highly integrated digital circuits, particularly in high-tech fields like artificial intelligence and the Internet of Things (IoT), where voltage fluctuations are critical, and robust safety measures are essential.

Slkor Transient Protection Diode P6SMB6.8A specification

Notably, while the P6SMB6.8A performs exceptionally in breakdown voltage, its reverse leakage current (Ir) is only 10mA, significantly lower than comparable products. This greatly reduces the component's power consumption in standby mode, helping to extend the overall lifespan of devices and lessen the thermal management burden on systems. Additionally, the maximum clamping voltage of 5.8V ensures that the P6SMB6.8A can quickly clamp the voltage to a safe level during transient overvoltage events, preventing damage to sensitive electronic components and ensuring the overall reliability and stability of the system.

Parameters of Slkor Transient Protection Diode P6SMB6.8A

In parallel, Guangdong Hanqi Semiconductor Co., Ltd.'s full-chip micro DFN/QFN packaging project injects new vitality into the semiconductor packaging technology sector. Focused on automotive-grade chips and third-generation semiconductor packaging, the project aims to enhance the performance, reliability, and stability of chips to meet the growing demand for high-performance, reliable chips in fields such as automotive electronics, new energy, and smart manufacturing. Automotive-grade chips, as the core components of automotive electronic systems, directly impact the safety, comfort, and intelligence of vehicles. Meanwhile, third-generation semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), are gradually replacing traditional silicon-based semiconductors due to their high power density, efficiency, and heat resistance, becoming key technologies in fields such as electric vehicles, 5G communication, and smart grids.

The combination of Slkor’s P6SMB6.8A transient voltage suppression diode and Guangdong Hanqi Semiconductor's full-chip micro DFN/QFN packaging project not only demonstrates the synergistic development of semiconductor components and packaging technologies but also signals a new technological revolution in the semiconductor industry. With the continued implementation of “new infrastructure” policies and the advancement of “carbon neutrality” goals, the semiconductor industry is poised for unprecedented growth opportunities. In this context, high-performance, reliable, low-power electronic components and advanced packaging technologies will play a key role in driving technological innovation and industrial upgrades.

Looking ahead, the P6SMB6.8A transient voltage suppression diode from Slkor will continue to provide excellent protection for circuits, ensuring the safe operation of integrated circuits. At the same time, the successful implementation of Guangdong Hanqi Semiconductor's full-chip micro DFN/QFN packaging project will open up broader applications for automotive-grade chips and third-generation semiconductor materials, driving the semiconductor industry to new heights. In the wave of technological innovation, every small step forward is a vital force in promoting societal progress. Let us look forward to an even more brilliant future for the semiconductor industry.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.