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SS320F Schottky Barrier Diodes SMAF SS320F Schottky Barrier Diodes SMAF SS320F Schottky Barrier Diodes SMAF
SS320F Schottky Barrier Diodes SMAF
IO:3.0A
VR(V):200V
VF(V):0.95V
IR:0.3mA
Package:SMAF

Product Details

Our advantages    

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.    


Description
The Polar High-Voltage Rectifier Diode is engineered for applications that demand robust performance under high-current and high-voltage conditions. With a continuous forward current rating of 3.0A and a maximum reverse voltage of 200V, this diode is designed to handle substantial electrical loads and high voltage requirements with reliability. It features a forward voltage drop of 0.95V and a low reverse leakage current of 0.3mA, which ensures efficient operation and minimal power loss. The diode is packaged in a compact SMAF package, making it suitable for applications with limited space.

Features

● Metal silicon junction, majority carrier conduction

● For surface mounted applications 

● Low power loss, high efficiency

● High forward surge current capability

● For use in low voltage, high frequency inverters,free wheeling, and polarity protection applications 

Mechanical Data

● Case: SMAF

● Terminals: Solderable per MIL-STD-750, Method 2026

● Approx. Weight: 27mg / 0.00095oz

Applications

● Power Supply Units
● High-Voltage Electronics
● DC-DC Converters
● Consumer and Industrial Electronics
● Electrical Protection Circuits

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