SCHOTTKY BARRIER DIODE

FEATURES

• Metal silicon junction, majority carrier conduction.

• Guarding for overvoltage protection.

• Low power loss, high efficiency.

• High current capability low forward voltage drop.

• High surge capability.

• For use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

MECHANICAL DATA

• Case: S0D-123

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx.Weight: 16mg/0.00056oz