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Description:
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) .
Features:
● Low forward voltage
● Low capacitance
Applications:
● Ultra high-speed switching
● Line termination
● Voltage clamping
● Reverse polarity protection
Quick reference data
| Symbol | Parameter | Conditions | Max | Unit |
| VR | reverse voltage | 30 | V | |
| VF | forward voltage |
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C |
1000 | mV |
| IR | reverse current |
VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C |
2 | µA |
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