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The best-selling products of Slkor.
  • Updated: 2024-04-02
  • Views: 4924
The SL75N06Q is an N-channel MOSFET with a drain-source voltage of 60V and a continuous drain current of 47A. It is known for its low on-resistance (8.5mΩ@10V, 20A) and low threshold voltage (2.4V@250uA). These characteristics make it an ideal choice for high-frequency switching in packaging equipment systems. With the……
  • Updated: 2024-03-29
  • Views: 5604
The 2N7002T is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 3A. It is known for its low on-state resistance (3Ω at 4.5V) and relatively low threshold voltage (3V at 250μA). These features make the 2N7002T widely used in solid-state relays for air compressors, especially in appli……
  • Updated: 2024-03-29
  • Views: 5542
The SL10N06A is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 10A, known for its low on-state resistance (35mΩ @ 10V, 5A) and relatively low threshold voltage (2.5V @ 250uA). These characteristics make the SL10N06A an ideal power management and current control component in the la……
  • Updated: 2024-03-29
  • Views: 5194
The SL2328A is an N-channel MOSFET with a 100V drain-source voltage and 2A continuous drain current. It is renowned for its low on-state resistance (310mΩ @ 10V, 2A) and relatively low threshold voltage (3V @ 250uA). These features make the SL2328A an ideal switch and regulating component in motor control, especially i……
  • Updated: 2024-03-28
  • Views: 5328
The SL20N10 is an N-channel MOSFET with a 100V drain-source voltage and 20A continuous drain current, renowned for its low on-state resistance (70Ω at 10V) and low threshold voltage (1.5V at 250uA). These characteristics make the SL20N10 an ideal switch and signal processing component in the battery management system o……
  • Updated: 2024-03-28
  • Views: 5263
The 2N7002KT is an N-channel MOSFET with a 60V drain-source voltage and a 1A continuous drain current. It is renowned for its low on-resistance (2.5Ω @ 10V) and relatively low threshold voltage (1.5V @ 250μA). These features make the 2N7002KT an ideal switch and signal processing component in miniaturized medical elect……
  • Updated: 2024-03-28
  • Views: 5263
The SL2308 is an N-channel MOSFET with a 60V drain-source voltage and a 1.8A continuous drain current. It features low on-state resistance (135mΩ@10V, 1.8A) and serves as a power electronic component known for its fast switching speed, low power consumption, and high reliability. These characteristics make it an ideal ……
  • Updated: 2024-03-27
  • Views: 5335
SL9968 is an N-channel MOSFET with a 100V drain-source voltage and 15A continuous drain current, renowned for its low on-state resistance (80mΩ@10V, 4A) and lower threshold voltage (2V@250uA). These characteristics make SL9968 an ideal power semiconductor device in power management systems, particularly in applications……
  • Updated: 2024-03-27
  • Views: 5531
The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω @ 10V) and relatively low threshold voltage (2.5V @ 1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especi……
  • Updated: 2024-03-27
  • Views: 5933
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250uA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new……
  • Updated: 2024-03-26
  • Views: 5406
The BSS131 is an N-channel MOSFET with excellent performance characteristics. It has a high voltage tolerance (240V) and a moderate current rating (0.1A), making it ideal for low-voltage and Medium Voltage switching and power control applications. In addition, its low on-resistance (9.07Ω @ 4.5V, 0.09A) and low thresho……
  • Updated: 2024-03-26
  • Views: 5420
The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low ……

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