Technical Blogs-SLKOR Semiconductor: Discrete Semiconductors Manufacturer

【Daily Highlight】The Medium Voltage MOSFET IRF640

Updated: 2024-03-27
Views: 6844

The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250uA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new……

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【Daily Highlight】The Medium Voltage MOSFET BSS131

Updated: 2024-03-26
Views: 6317

The BSS131 is an N-channel MOSFET with excellent performance characteristics. It has a high voltage tolerance (240V) and a moderate current rating (0.1A), making it ideal for low-voltage and Medium Voltage switching and power control applications. In addition, its low on-resistance (9.07Ω @ 4.5V, 0.09A) and low thresho……

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【Daily Highlight】The Medium Voltage MOSFET SL05N06Z

Updated: 2024-03-26
Views: 6272

The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low ……

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【Daily Highlight】The Medium Voltage MOSFET IRFR5305

Updated: 2024-03-26
Views: 6120

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ @ -10V, -15A) and low thre……

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【Daily Highlight】The Medium Voltage MOSFET SL25N10

Updated: 2024-03-25
Views: 6422

The SL25N10 is an N-channel MOSFET with outstanding performance parameters. It features a high drain-source voltage (100V) and a large current-carrying capacity (25A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (35mΩ @ 10V, 15A) and low thres……

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【Daily Highlight】The Medium Voltage MOSFET SL50N06D

Updated: 2024-03-23
Views: 6350

The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance (14mΩ at 10V, 25A……

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Basic terminology of advanced packaging

Updated: 2024-03-22
Views: 8059

Advanced packaging is a major technological highlight of the "More than Moore" era. As chip miniaturization becomes increasingly challenging and costly at ea……

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Comprehensive review semiconductor equipment in one article

Updated: 2024-03-22
Views: 6309

Due to the complexity of semiconductor manufacturing processes, different equipment is required for various steps. From a process classification perspective, semiconductor equipment can be mainly divided into silicon wafer production process equipment, wafer manufacturing process equipment, packaging process equipment,……

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Five common types of sensors in the field of industrial automation

Updated: 2024-03-22
Views: 7141

In modern industrial production, especially in automated processes, sensors are almost indispensable. Specifically, industrial producers need to use various sensors to monitor and control various parameters in the production process, ensuring that equipment operates normally and any faults can be promptly detected.

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【Daily Highlight】The Medium Voltage MOSFET SL2309A

Updated: 2024-03-22
Views: 6050

The SL2309A is a P-channel MOSFET with excellent characteristics such as -60V drain-source voltage, -2.0A continuous drain current, low on-state resistance (158mΩ@-10V,-2A), and low threshold voltage (-1.9V@-250uA). This power device is suitable for the power and control system design of electric Vertical Take-Off and ……

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Everything about Flip Chip Technology

Updated: 2024-03-21
Views: 8149

Flip chip technology originated from IBM, which developed the process of creating bumps on chips for flip chip soldering in 1960. The process involved surrounding the bumps with 95Pb5Sn encasing electroplated NiAu bumps. Later, PbSn bumps were used, employing Controlled Collapse Component Connection (C4) technology, in……

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【Daily Highlight】The Medium Voltage MOSFET BAS70W-05

Updated: 2024-03-21
Views: 6252

The BAS70W-05 is an N-channel MOSFET with a 70V drain-source voltage and a maximum forward average rectified current of 100mA. It features high current-carrying capacity, low forward voltage drop, and fast switching speed. These characteristics make the BAS70W-05 an ideal current control and voltage regulation componen……

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