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  • Updated: 2024-03-21
  • Views: 7089
The bipolar junction transistor was invented by a research team at Bell Laboratories in 1947. The first transistor consisted of two metal wires with sharp endpoints making point contact with a germanium substrate. While primitive by today's standards, this first transistor significantly transformed the entire electroni……
  • Updated: 2024-03-20
  • Views: 6987
In daily life, all objects can be roughly classified by their electrical conductivity into three categories: conductors, semiconductors, and insulators. This is easy to understand; objects either conduct electricity, do not conduct electricity, or conduct a little bit. It is precisely these materials that are ambiguou……
  • Updated: 2024-03-20
  • Views: 6396
The SL4421 is a P-channel MOSFET with a -60V drain-source voltage and a -8.5A continuous drain current, known for its low on-state resistance (23mΩ at -10V, -8A) and a relatively low threshold voltage (-1.6V at 250uA). These characteristics enable the SL4421 to control, protect, and manage battery charging and discharg……
  • Updated: 2024-03-19
  • Views: 6326
The SL12N10 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 12A. It has gained attention for its low on-state resistance (130mΩ @ 10V, 220mA) and relatively low threshold voltage (2V @ 250uA). In the design of today's portable charging devices such as power banks and wireles……
  • Updated: 2024-03-18
  • Views: 5939
The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250uA). These features make it an ideal choice for automotive electronic systems. With the contin……
  • Updated: 2024-03-15
  • Views: 6032
The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low thres……
  • Updated: 2024-03-14
  • Views: 6900
In the electronic circuit, MOS tube and IGBT tube often appear, they can be used as switch components, and MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters. So why do some circuits use MOS tubes, and some circuits use IGBT tube? Let's take a look at what is the difference between th……
  • Updated: 2024-03-14
  • Views: 6324
The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……
  • Updated: 2024-03-14
  • Views: 6244
MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω @ 10V, 500mA), and a lower threshold voltage (2.5V @ 250uA), making it an ideal choice for applications in power management, el……
  • Updated: 2024-03-14
  • Views: 7113
Explanation of Common Semiconductor Defect Terminology
  • Updated: 2024-03-14
  • Views: 6649
This article introduces the design ideas of the motor controller IGBT module driving circuit, explains the characteristics of the IGBT module, the design and protection of the gate -drive circuit, and the current, voltage, and temperature protection of the IGBT module in normal operation. And provide corresponding desi……
  • Updated: 2024-03-13
  • Views: 7168
Photolithography technology, as a precision microfabrication process, involves transferring meticulously designed micro-patterns onto photosensitive materials. At its core, it utilizes photolithography machines to accurately project patterns onto substrates, enabling the precise manufacturing of microstructures.

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