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  • Updated: 2024-01-31
  • Views: 6954
SLKOR Semiconductor is a company dedicated to the research and development of semiconductor technology and production, and has been continuously promoting the development of the semiconductor industry for many years. Its product line covers various products such as MOSFETs, diodes, and thyristors, among which the low-v……
  • Updated: 2024-01-30
  • Views: 6446
The SL250N04Q is an N-channel MOSFET with the following parameters: a drain-source voltage (Vdss) of 40V, a continuous drain current (Id) of 250A, an on-resistance (RDS(on)@Vgs,Id) of 0.8mΩ @ 10V, 20A, a threshold voltage (Vgs(th)@Id) of 1.7V @ 250uA, and it is packaged in a PDFN (5x6).
  • Updated: 2024-01-29
  • Views: 6209
In today's digital era, the rapid development of IoT and artificial intelligence technologies is driving transformation in various industries. Among them, the smart lighting industry has experienced rapid growth in recent years, becoming a highly regarded field. Smart lighting refers to the use of IoT technology, wired……
  • Updated: 2024-01-26
  • Views: 6763
2023 was not an easy year for the entire semiconductor industry. According to WSTS data, the market size of the semiconductor component industry was $520.1 bill……
  • Updated: 2024-01-25
  • Views: 7179
The rapid development of automotive intelligence and electrification has led to a continuous increase in global demand for semiconductors. Particularly, the popularity and penetration rate of new energy vehicles have further fueled the demand for components, presenting tremendous opportunities for the semiconductor ind……
  • Updated: 2024-01-24
  • Views: 6994
One of the important products of SLKOR is the high-voltage MOSFET SL13N50FS. The SL13N50FS is an N-channel MOSFET with a drain-source voltage of 500V, a continuous drain current of 13A, and a power handling capability of 50W. Additionally, it has an on-resistance of 520mΩ@10V, 6.5A, and exhibits fast switching characte……
  • Updated: 2024-01-23
  • Views: 6574
SL5N50D adopts an N-channel structure, where current is carried by negative charges in its conducting layer, providing stable and reliable performance in high-voltage environments. Its drain-source voltage (Vdss) is 500V, allowing it to operate under voltages as high as 500 volts. Its continuous drain current (Id) is 5……
  • Updated: 2024-01-20
  • Views: 6647
In the face of a lack of core technology, the call for domestic substitution in the Chinese chip industry is growing louder. With strong support from national policies, domestic chip manufacturers have experienced explosive growth, and the self-sufficiency rate of domestically produced chips has increased from less tha……
  • Updated: 2024-01-19
  • Views: 6105
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures r……
  • Updated: 2024-01-18
  • Views: 6365
Shenzhen SLKOR Micro semicon Co., Ltd. (www.slkoric.com) is a company dedicated to promoting independent innovation and research and development in the Chinese semiconductor industry. In the face of increasingly fierce global competition in the semiconductor industry, the Chinese semiconductor industry is facing tremen……
  • Updated: 2024-01-17
  • Views: 6454
As a company driven by technological innovation, SLKOR Semiconductor has been committed to promoting independent research and development and advancing the localization process of key electronic components. In this context, SLKOR has introduced a low-voltage MOSFET, SL318N04M, which boasts exceptional performance and r……
  • Updated: 2024-01-16
  • Views: 6460
SLKOR low-voltage MOSFET SL276N04M is an N-channel MOSFET with outstanding performance and a wide range of applications. This product plays an important role in the electronics industry, providing stable power supply and control functions for various circuits and devices. The MOSFET's parameters demonstrate its excelle……

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