Technical Blogs-SLKOR Semiconductor: Discrete Semiconductors, TVS、ESD、diodes、 components、transistors、mosfet、igbt、Rectifier、Discrete Power Devices、SCR、TRIAC、Zener Diode; Integrated Semiconductors, Op-amp、hall sensor、 Linear Regulator / LDO、DC-DC Convertor、AC-DC Convertor and Optocoupler

【Daily Highlight】BSS123 N-Channel TrenchMOS transistor Logic level FET

Updated: 2023-06-27
Views: 7571

N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology.

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【Daily Highlight】SL2309 P-Channel 60-V (D-S) MOSFET

Updated: 2023-06-26
Views: 7125

A P-Channel enhancement mode power MOSFET

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【Daily Highlight】SL80N10 N-Channel 100-V (D-S) 175°C MOSFET

Updated: 2023-06-25
Views: 7736

The SSL80N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

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【Daily Highlight】SL15N10A N-Channel Power MOSFET

Updated: 2023-06-21
Views: 8398

The SL15N10A uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

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【Daily Highlight】SL2301 P-Channel Enhancement Mode Power MOSFET

Updated: 2023-06-20
Views: 8803

A P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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【Daily Highlight】 SOT-23 P-channel MOS BSS84 : Cost Effective Solutions for Low-voltage Applications Requiring a Low-current High-side Switch

Updated: 2023-06-15
Views: 7538

Today, we will introduce the Low-Voltage P-channel MOS BSS84 from Slkor, a P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) package using Trench MOSFET technology. It is an ideal choice for mobile devices, power management, and LED lighting etc.

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【Daily Highlight】 SOT-23 Low-Voltage MOSFET SL2302S from Slkor: Lower Switching Losses Improving System Efficiency.

Updated: 2023-06-13
Views: 8988

The SOT-23 N channel MOSFET SL2302S from Slkor, which is suitable for various low-voltage low power range applications，etc., DC-DC converters, power management, analog switch circuits, battery protection…

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Addressing the signal transmission challenges in the power electronics field, SlkorMicro's optocoupler SL-1007 empowers high-performance applications

Updated: 2023-05-25
Views: 7813

Shenzhen SlkorMicro Semiconductor Co., Ltd. is a high-tech company that integrates design, research and development, manufacturing, and sales services. It has mastered the core technology of silicon carbide power devices. Currently, the "Slkor" brand is widely accepted by peers and customers, making SlkorMicro one of t……

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Slkor Optocoupler SLH11L1: A high-performance, highly reliable optocoupler solution.

Updated: 2023-05-23
Views: 8437

The Slkor Optocoupler SLH11L1 is a high-performance and highly reliable optocoupler solution. It offers significant advantages in terms of its parameters, with a VCEO (Voltage Collector-Emitter) of 16V, IC (Collector Current) of 50mA, VR (Reverse Voltage) of 6V, IF (Forward Current) of 60mA, and a DIP-6 package. These ……

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[Featured Product] Introduction and Applications of Slkor Brand Optocoupler SL3063

Updated: 2023-05-18
Views: 7845

The Slkor optocoupler SL3063 is a bidirectional triac optocoupler featuring a zero-crossing circuit and 1 output channel. It has a forward voltage drop of 1.24V, a forward current of 60mA, a peak blocking voltage of 600V, a static dv/dt of 1000V/us, an isolation voltage of 5kV, and an operating temperature range of -40……

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How to calculate component temperature?

Updated: 2023-03-31
Views: 12589

When we purchase and make circuit solutions, we often need to consider the temperature of the components. After all, each component has a temperature range limit. At this time, we need to calculate the temperature of the components before selecting suitable components. Then the original components How to calculate the ……

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Basic knowledge and working principle of transistor

Updated: 2022-12-07
Views: 9863

Its common feature is that it has three electrodes, which is the origin of the abbreviation "triode". Generally speaking, the interior of the triode is a three-layer structure composed of P-type semiconductors and N-type semiconductors, which are divided into NPN type and PNP type according to the hierarchical order.

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