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Daily Highlight
The best-selling products of Slkor.
  • Updated: 2024-01-25
  • Views: 8124
The rapid development of automotive intelligence and electrification has led to a continuous increase in global demand for semiconductors. Particularly, the popularity and penetration rate of new energy vehicles have further fueled the demand for components, presenting tremendous opportunities for the semiconductor ind……
  • Updated: 2024-01-24
  • Views: 7713
One of the important products of SLKOR is the high-voltage MOSFET SL13N50FS. The SL13N50FS is an N-channel MOSFET with a drain-source voltage of 500V, a continuous drain current of 13A, and a power handling capability of 50W. Additionally, it has an on-resistance of 520mΩ@10V, 6.5A, and exhibits fast switching characte……
  • Updated: 2024-01-23
  • Views: 7288
SL5N50D adopts an N-channel structure, where current is carried by negative charges in its conducting layer, providing stable and reliable performance in high-voltage environments. Its drain-source voltage (Vdss) is 500V, allowing it to operate under voltages as high as 500 volts. Its continuous drain current (Id) is 5……
  • Updated: 2024-01-20
  • Views: 7255
In the face of a lack of core technology, the call for domestic substitution in the Chinese chip industry is growing louder. With strong support from national policies, domestic chip manufacturers have experienced explosive growth, and the self-sufficiency rate of domestically produced chips has increased from less tha……
  • Updated: 2024-01-19
  • Views: 6811
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures r……
  • Updated: 2024-01-18
  • Views: 6986
Shenzhen SLKOR Micro semicon Co., Ltd. (www.slkoric.com) is a company dedicated to promoting independent innovation and research and development in the Chinese semiconductor industry. In the face of increasingly fierce global competition in the semiconductor industry, the Chinese semiconductor industry is facing tremen……
  • Updated: 2024-01-17
  • Views: 7099
As a company driven by technological innovation, SLKOR Semiconductor has been committed to promoting independent research and development and advancing the localization process of key electronic components. In this context, SLKOR has introduced a low-voltage MOSFET, SL318N04M, which boasts exceptional performance and r……
  • Updated: 2024-01-16
  • Views: 7253
SLKOR low-voltage MOSFET SL276N04M is an N-channel MOSFET with outstanding performance and a wide range of applications. This product plays an important role in the electronics industry, providing stable power supply and control functions for various circuits and devices. The MOSFET's parameters demonstrate its excelle……
  • Updated: 2024-01-15
  • Views: 7240
The FDN327N is an N-channel MOSFET field-effect transistor manufactured by SLKOR. One of its main features is its high power and high current handling capability. It can withstand a continuous drain current of 2A and has an on-state resistance of 40mΩ (Vgs = 4.5V, Id = 2.0A), with a drain-source voltage (Vdss) of 20V. ……
  • Updated: 2024-01-12
  • Views: 7123
FDN336P is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by SLKOR, designed specifically for load switch and power management applications. It features a compact SOT-23 package and a low threshold voltage, making it suitable for various small electronic devices. One of the key features……
  • Updated: 2024-01-11
  • Views: 7189
Low voltage MOSFET is a specially designed metal-oxide-semiconductor field-effect transistor (MOSFET) primarily used in low voltage applications. It has a range of features and advantages suitable for various electronic devices and circuit designs. The main characteristics of low voltage MOSFETs include fast switching ……
  • Updated: 2024-01-10
  • Views: 6911
The SL9305 is designed with a planar positive-intrinsic-negative (PIN) structure, which allows for high photovoltaic conversion efficiency and sensitivity. This structure also helps to reduce leakage and reflection on the photosensitive surface, improving the signal detection sensitivity. With a dark current of only 0.……

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