Electronics Basics | Slkor Semiconductor

The development background and advantages of SiC MOSFET power devices

Updated: 2023-09-06
Views: 7163

The development background of SiC power devices We know that by applying SiC to power devices, low-loss power conversion can be achieved, which was not possible with traditional Si power devices. It is not difficult to see that this is a major reason f

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Power semiconductor ushers in the era of SiC (III)

Updated: 2023-09-05
Views: 7066

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly. Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most ……

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Power semiconductor ushers in the era of SiC (II)

Updated: 2023-09-05
Views: 6673

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly. Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most ……

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Power semiconductor ushers in the era of SiC (I)

Updated: 2023-09-05
Views: 6475

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly. Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most ……

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How to calculate component temperature?

Updated: 2023-03-31
Views: 10382

When we purchase and make circuit solutions, we often need to consider the temperature of the components. After all, each component has a temperature range limit. At this time, we need to calculate the temperature of the components before selecting suitable components. Then the original components How to calculate the ……

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Basic knowledge and working principle of transistor

Updated: 2022-12-07
Views: 7989

Its common feature is that it has three electrodes, which is the origin of the abbreviation "triode". Generally speaking, the interior of the triode is a three-layer structure composed of P-type semiconductors and N-type semiconductors, which are divided into NPN type and PNP type according to the hierarchical order.

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Basic knowledge of transistor

Updated: 2022-12-06
Views: 7915

Its main function is current amplification (analog circuit) and switching action (digital circuit).

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The difference between TVS tube and ESD protection diode

Updated: 2022-12-01
Views: 7414

No matter how the TV is generated here, such as direct or indirect lightning strikes, electrostatic discharge, large-capacity load switching and other factors cause surges. The voltage ranges from a few volts to tens of kilovolts or even higher.

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Transient suppression diode TVS selection

Updated: 2022-11-26
Views: 7964

The advantages of TVS tubes: 1. The response speed is extremely fast (Ps level); 2. The breakdown voltage ranges from 6.12V to 550V; 3. The clamping voltage is more accurate.

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What are the functions of TVS diodes

Updated: 2022-11-18
Views: 7897

The TVS tube is a high-efficiency protection device. When the two ends are subjected to an instantaneous high-energy impact, the TVS tube can instantly convert its high-resistance characteristics into low-resistance characteristics, absorb large currents, and clamp the voltage at both ends of the TVS tube. At a certain……

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Product features and selection of ESD electrostatic protector

Updated: 2022-11-17
Views: 6568

ESD electrostatic protector is an overvoltage, anti-static protection component, used to protect sensitive circuits in electronic equipment from the influence of ESD (electrostatic discharge), asThe purpose is to transfer the ESD stress from the sensitive component, so that the current flows through the protective comp……

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What are the precautions for TVS devices?

Updated: 2022-11-12
Views: 7295

1. Regarding the relationship between the peak value of absorbed power of transient voltage and the pulse width of transient voltage, the manual only gives the ……

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